Obtaining nanoimprint template gratings with 10 nm half-pitch by atomic layer deposition enabled spacer double patterning

Dhuey, Scott; Péroz, Christophe; Olynick, D. L.; Calafiore, Giuseppe Carlo; Cabrini, Stefano

doi:10.1088/0957-4484/24/10/105303

Cited by 24 publications

(17 citation statements)

References 14 publications

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“…Spacer lithography [32,79,[100][101][102][103][104][105][106][107][108][109] has been used primarily to reduce the size and pitch of nanowire or nano line patterns using the side edge of the existing nanopattern (Figure 3). It is also called self-aligned double patterning (SADP) [104,110] or spacer defined double patterning (SDDP) [111,112] because it requires a multistep patterning process. Spacer lithography utilizes the thin film deposited on the side edge of hundreds of nanoscale patterns as one pattern.…”

Section: Spacer Lithographymentioning

confidence: 99%

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Recent Progress in Simple and Cost‐Effective Top‐Down Lithography for ≈10 nm Scale Nanopatterns: From Edge Lithography to Secondary Sputtering Lithography

et al. 2020

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The development of a simple and cost‐effective method for fabricating ≈10 nm scale nanopatterns over large areas is an important issue, owing to the performance enhancement such patterning brings to various applications including sensors, semiconductors, and flexible transparent electrodes. Although nanoimprinting, extreme ultraviolet, electron beams, and scanning probe litho‐graphy are candidates for developing such nanopatterns, they are limited to complicated procedures with low throughput and high startup cost, which are difficult to use in various academic and industry fields. Recently, several easy and cost‐effective lithographic approaches have been reported to produce ≈10 nm scale patterns without defects over large areas. This includes a method of reducing the size using the narrow edge of a pattern, which has been attracting attention for the past several decades. More recently, secondary sputtering lithography using an ion‐bombardment technique was reported as a new method to create high‐resolution and high‐aspect‐ratio structures. Recent progress in simple and cost‐effective top‐down lithography for ≈10 nm scale nanopatterns via edge and secondary sputtering techniques is reviewed. The principles, technical advances, and applications are demonstrated. Finally, the future direction of edge and secondary sputtering lithography research toward issues to be resolved to broaden applications is discussed.

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Section: Spacer Lithographymentioning

confidence: 99%

“…[122] Spacer lithography is preformed through the following processes ( Figure 3a). [111] First, a prepattern for depositing spacer material is fabricated by various lithography methods such as nanoimprint lithography and photolithography. Second, spacer material is deposited on the prepattern.…”

Section: Spacer Lithographymentioning

confidence: 99%

Recent Progress in Simple and Cost‐Effective Top‐Down Lithography for ≈10 nm Scale Nanopatterns: From Edge Lithography to Secondary Sputtering Lithography

et al. 2020

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“…33 In addition, ALD-enabled SSDP has been used by Dhuey et al to fabricate nanoimprint template gratings with 10 nm half-pitch. 34 In that work, EBL was employed to define the initial features, and D-SDDP involving plasma-assisted ALD of Al 2 O 3 subsequently allowed for doubling of the spatial frequency of the gratings. In earlier work of the same group, ALD was used to tune the dimensions of nanoprint lithography templates to sub-10 nm resolution, 35 which can also be referred to as ALD-enabled nanopatterning.…”

Section: A Spacer Defined Double Patterningmentioning

confidence: 99%

The use of atomic layer deposition in advanced nanopatterning

2014

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Atomic layer deposition (ALD) is a method that allows for the deposition of thin films with atomic level control of the thickness and an excellent conformality on 3-dimensional surfaces. In recent years, ALD has been implemented in many applications in microelectronics, for which often a patterned film instead of full area coverage is required. This article reviews several approaches for the patterning of ALD-grown films. In addition to conventional methods relying on etching, there has been much interest in nanopatterning by area-selective ALD. Area-selective approaches can eliminate compatibility issues associated with the use of etchants, lift-off chemicals, or resist films. Moreover, the use of ALD as an enabling technology in advanced nanopatterning methods such as spacer defined double patterning or block copolymer lithography is discussed, as well as the application of selective ALD in self-aligned fabrication schemes.

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“…Due to the downward scaling of devices in recent years together with the trend toward increased 3D functionality, the fabrication process required to generate these structures faces progressively more difficult demands. The top‐down fabrication of conventional lithographic patterning is becoming more challenging to scale, in part because it consists of many steps that may result in misalignments when used for building 3D structures or multilayer 2D structures . Selective deposition approaches to device fabrication have therefore gained increased interest as a way to provide direct, additive deposition of desired materials with a variety of thicknesses without the need for extra lithography steps …”

Section: Introductionmentioning

confidence: 99%

Sequential Regeneration of Self‐Assembled Monolayers for Highly Selective Atomic Layer Deposition

Hashemi¹,

Bent

2016

Adv Materials Inter

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Next generation 3D electronic devices will require novel processing methods. Area selective atomic layer deposition (ALD) of robust films has the opportunity to play an important role in significantly reducing complexities associated with current top‐down fabrication processes of patterned structures. An all‐vapor process is demonstrated for depositing and regenerating thiol self‐assembled monolayers (SAMs) on copper between ALD cycles. It is shown that by redosing SAM precursors, the SAM quality can be restored after it begins to degrade. It is also shown that this approach is effective in improving the blocking properties of the SAMs against ZnO ALD. This process allows selective deposition of dielectric films on dielectric regions of patterned Cu/SiO2 substrates more than three times thicker than approaches that do not regenerate the SAM. In addition, this all‐vapor strategy provides the ability to integrate the selective deposition process into the ALD reactor, reduces artifacts associated with depositing the SAMs on porous or 3D structures, and decreases the required deposition time for the passivation layer, opening up the possibility for new applications in next generation electronic devices.

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Obtaining nanoimprint template gratings with 10 nm half-pitch by atomic layer deposition enabled spacer double patterning

Cited by 24 publications

References 14 publications

Recent Progress in Simple and Cost‐Effective Top‐Down Lithography for ≈10 nm Scale Nanopatterns: From Edge Lithography to Secondary Sputtering Lithography

Recent Progress in Simple and Cost‐Effective Top‐Down Lithography for ≈10 nm Scale Nanopatterns: From Edge Lithography to Secondary Sputtering Lithography

The use of atomic layer deposition in advanced nanopatterning

Sequential Regeneration of Self‐Assembled Monolayers for Highly Selective Atomic Layer Deposition

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