2019
DOI: 10.1007/s41871-019-00043-5
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Obtaining Atomically Smooth 4H–SiC (0001) Surface by Controlling Balance Between Anodizing and Polishing in Electrochemical Mechanical Polishing

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Cited by 27 publications
(9 citation statements)
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“…Ultra-smooth surface processing can be realized by utilising mechanical [1], electrochemical mechanical [2], dry chemical process [3], or by energy beam [4] technology. Previous plasma figuring of silicon based optical surfaces has been undertaken using a radio frequency plasma jet at atmospheric pressure.…”
Section: Introductionmentioning
confidence: 99%
“…Ultra-smooth surface processing can be realized by utilising mechanical [1], electrochemical mechanical [2], dry chemical process [3], or by energy beam [4] technology. Previous plasma figuring of silicon based optical surfaces has been undertaken using a radio frequency plasma jet at atmospheric pressure.…”
Section: Introductionmentioning
confidence: 99%
“…Yang [51] studied the effect of the balance between the anodic oxidation rate and the oxide removal rate on the polishing performance of 4H-SiC ECMP by the ceria grinding stone. It was found that with the increase in the oxide layer, the interface between SiC and the oxide layer became rough, which led to the increase in SiC surface roughness after ECMP.…”
Section: Electrochemical Mechanical Polishing (Ecmp)mentioning
confidence: 99%
“…Electropolishing is an efficient polishing process for metal materials in concentrated electrolytes; it generates a damage-free surface because the material is removed through anodic dissolution [1][2][3]. Atomic and close-toatomic scale accuracy is possible with the electrochemical machining and electropolishing method because the material is removed atom by atom in the anodic dissolution [4][5][6].…”
Section: Introductionmentioning
confidence: 99%