Observing hydrogen silsesquioxane cross‐linking with broadband CARS

Caster, Allison G.; Kowarik, Stefan; Schwartzberg, Adam M.; Nicolet, Olivier; Lim, Su Jun; Leone, Stephen R.

doi:10.1002/jrs.2190

Cited by 26 publications

(21 citation statements)

References 25 publications

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“…[17][18][19][20][21][22][23] These previous studies show successful patterning of sol-gel polymethylsisesquioxane-based films but require a buffer coating [17,18] or a crosslink promoter [19] to achieve adequate patterning. In the case of hydrogensilsesquioxanes, sol-gel polymer hybrid films have been patterned using EBL; [21,22] however, these high organic content photoresists present some drawbacks, such as irreproducibility, reaction front propagation beyond the exposed regions, and thermal stability, that need to be overcome. [23] In this work we have combined sol-gel processing with DXRL to obtain an easy, fast, and versatile process that does not require additional cross-linker compounds, buffer coatings, or other restrictions to silsesquioxanes.…”

mentioning

confidence: 93%

Fabrication of Advanced Functional Devices Combining Soft Chemistry with X‐ray Lithography in One Step

et al. 2009

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Deep X-ray lithography combined with sol-gel techniques offers facile fabrication of controlled patterned films. Using sol-gel, different functional properties can be induced; deep X-ray lithography alters the functionality in the exposed regions. Miniaturized devices based on local property changes are easily fabricated: this technique requires no resist, enabling direct patterning of films in a one-step lithographic process.

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confidence: 93%

Fabrication of Advanced Functional Devices Combining Soft Chemistry with X‐ray Lithography in One Step

et al. 2009

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“…Bonn et al [123] presented micro-CARS results on two different cell lines, adipocytes and HeLa cells, with distinct lipid droplet characteristics, both in terms of lipid droplet size and dependence of the lipid droplet composition on the incubation medium. Caster et al [124] report real-time measurements of in situ cross-linking of the photoresist material hydrogen silsesquioxane cross-linking using broadband CARS. A simple analysis model was used by Munhoz et al [125] to describe linear polarization CARS spectroscopy.…”

Section: Coherent Anti-stokes Raman Spectroscopymentioning

confidence: 99%

Recent advances in linear and nonlinear Raman spectroscopy. Part IV

Nafie

2010

J Raman Spectroscopy

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The purpose of the review is to provide a concise overview of recent advances in the broadly defined field of Raman spectroscopy as reflected in part by the many articles published each year in the Journal of Raman Spectroscopy (JRS) as well as in trends across all related journals publishing in this research area. Context for the review is provided by considering statistical data on citations for the Thompson Reuters ISI Web of Science by year and by subfield of Raman spectroscopy. Additional statistics of number of papers and posters presented by category at the XXII International Conference on Raman Spectroscopy (ICORS 2010) is also provided. Papers published in JRS in 2009, as reviewed here, reflect trends at the cutting edge of Raman spectroscopy which is expanding rapidly as a sensitive photonic probe of matter at the molecular level with an ever widening sphere of novel applications.

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“…2 HSQ resist has a cage like structure in which Si-H bonds are located at each corner and are bridged by oxygen atoms. 3 After exposure with EBL or EUV, HSQ resist is converted into a material close in composition to silicon oxide. 4 At this time, there are no reports in the literature that explain the exact mechanism by which HSQ responds to EUV light; however, the exposure mechanism of HSQ resist with the electron beams has been reported.…”

Section: Introductionmentioning

confidence: 99%

Process development for high resolution hydrogen silsesquioxane patterning using a commercial scanner for extreme ultraviolet lithography

Desai

Mellish

Bennett

et al. 2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The semiconductor industry is transitioning toward the use of extreme ultraviolet (EUV) lithography as a next generation patterning technology. There are currently only a limited number of high resolution EUV photoresists reported with EUV patterning capabilities, and those are generally tested using EUV-interference lithography. One such resist is the more commonly known electron beam resist, hydrogen silsesquioxane (HSQ), which is also sensitive to EUV exposure. In the present work, high resolution, dense, subdense patterning of HSQ resist on 300 mm wafers was demonstrated using ASML's NXE 3300B scanner. The critical dimensions analyzed ranged from 18 to 10 nm. Resolution down to 10.0 on 21.0 nm spacing was achieved with 6.5 nm line width roughness. This demonstration of high resolution EUV patterning of HSQ on a commercial scanner makes this process potentially viable for high volume manufacturing.

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Observing hydrogen silsesquioxane cross‐linking with broadband CARS

Cited by 26 publications

References 25 publications

Fabrication of Advanced Functional Devices Combining Soft Chemistry with X‐ray Lithography in One Step

Fabrication of Advanced Functional Devices Combining Soft Chemistry with X‐ray Lithography in One Step

Recent advances in linear and nonlinear Raman spectroscopy. Part IV

Process development for high resolution hydrogen silsesquioxane patterning using a commercial scanner for extreme ultraviolet lithography

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