Observations of Overlapped Single Shockley Stacking Faults in 4H-SiC PiN Diode

Abstract

In 4H-SiC PiN diodes, Shockley-type stacking faults expand from basal plane dislocations under conducting forward current. We report for the rst time overlapped single Shockley-type stacking faults in a 4H-SiC PiN diode after forward conduction. In photoluminescence measurements, we observed not only an emission peak at 425 nm, which corresponds to the single Shockley-type stacking fault, but also one at 432 nm. In cross-sectional cathode luminescence images, emission lines at 425 nm and 432 nm merge and become straight. Transmission electron microscope images showed that the structure at the position with the 432 nm emission overlapped the single Shockley-type stacking faults.

Review of solution growth techniques for 4H-SiC single crystal

“…Therefore, it is vital to reduce defects through the optimization of SiC single crystal growth techniques and corresponding key parameters. [27] ; (b) Nomarski optical microscope images of KOH etching pits TSD, TED and BPD in a 4H-SiC single crystal substrate (off axis 4°) [28] ; (c) top view of solvent inclusions [29] ; (d) OM images of polytypes on 4H substrate [30] ; (e) TEM image of an SF [31] ; (f) metallographic microscope of MP [32] (a) (b)…”