Observations of holes around dislocation core in SiC crystal

Tanaka, Hidehiko; Uemura, Yoichiro; Inomata, Yoshizo

doi:10.1016/0022-0248(81)90151-2

Cited by 32 publications

(15 citation statements)

References 5 publications

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“…A large project for making SiC devices was carried out at the National Institute of Advanced Industrial Science and Technology (AIST), Japan, from 1998 to 2003. 53),54) Although largediameter wafers of SiC have not been practically produced due to the existence of micropipes, 55) single SiC crystals for blue LEDs are on the market. The physical properties of the SiC single crystals are listed in the references by Neuberger, Munro and Tanaka.…”

Section: Lely Methodsmentioning

confidence: 99%

Silicon carbide powder and sintered materials

Tanaka

2011

J. Ceram. Soc. Japan

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Silicon carbide (SiC) was first industrially synthesized in 1894 and has been used as refractories, abrasives and high temperature furnace parts. The basic fabrication and sintering technologies were almost established by about 1970. Recently, sintered SiC has become a key material as it has been widely used in advanced industries of semiconductors and high precision machines. New fabrication methods for modern SiC powders and sintering methods are being developed on the bases of traditional methods. In this review, the original studies and recent developments have been given maximum possible emphasis, and in particular, basic points of view are introduced.

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Section: Lely Methodsmentioning

confidence: 99%

Silicon carbide powder and sintered materials

Tanaka

2011

J. Ceram. Soc. Japan

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“…Diameters of hollow dislocation cores have been measured using transmission optical microscopy of thin plates, 6 phase contrast microscopy, 3 x-ray topography, and scanning electron microscopy (SEM). 4 Either limited experimental data 3,5 or large measurement scatter<6 conspired to make the results of such studies fail to support Eq. (1).…”

Section: Introductionmentioning

confidence: 94%

Hollow-core screw dislocations in 6H-SiC single crystals: A test of Frank’s theory

Dudley

Glass

et al. 1997

Journal of Elec Materi

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Hollow-core screw dislocations, also known as "micropipes', along the [0001] axis in 6H-SiC single crystals, have been studied by synchrotron white beam xray topography (SWBXT), scanning electron microscopy (SEM), and Nomarski optical microscopy (NOM). Using SWBXT, the magnitude of the Burgers vector of screw dislocations has been determined by measuring the following four parameters: (1) the diameter of dislocation images in back-reflection topographs;(2) the width ofbimodal dislocation images in transmission topographs; (3) the magnitude of the tilt of lattice planes on both sides of dislocation core in projection topographs; and (4) the magnitude of the tilt of lattice planes in section topographs. The four methods show good agreement. SEM results reveal that micropipes emerge as holes on the as-grown surface, with their diameters ranging from about 0.1 to a few micrometers. Correlation between topographic images and SEM micrographs shows that micropipes are hollow-core screw dislocations with Burgers vector magnitudes from 2c to 7c (c is the lattice parameter along the [0001] axis). There is no empirical evidence that lc dislocations have hollow cores. The Burgers vector magnitude of screw dislocations, b, and the diameter of associated micropipes, D, were fitted to Frank's prediction for hollow-core screw dislocations: D = pM/4n~y, where p is shear modulus, and )'is specific surface energy. Statistical analysis of the relationship between D and b 2 shows that it is approximately linear, and the constant )'/p ranges from 1.1 • 10 -3 to 1.6 • 10 -a nm.

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“…The basal plane dislocations (BPDs) lie in the basal planes with the Burgers vector along <11-20>, and a slight preference for the line direction also to be along one of the <11-20> directions. The second category of screw dislocations are micropipes: the dislocations with large Burgers vectors (b > 3c [0001]) and the open core [71][72][73]. BPD-related etch pits density of 4H-SiC substrates is typically in the 10 3 -10 4 / cm 2 range.…”

Section: Dislocationsmentioning

confidence: 99%