Observation of weak Kondo effect and angle dependent magnetoresistance in layered antiferromagnetic V5S8 single crystal

Controllable Growth of 2D V3S5 Single Crystal by Chemical Vapor Deposition

“…As illustrated in Figure 5b, the resistance upturn remains up to 10 T magnetic field, indicating that the resistance upturn stems from the electron-electron interaction (EEI), [35] which is different from the previously reported properties in V x S y (Table S2, Supporting Information). [12][13][14][15][16][17][18] Meanwhile, a large and unsaturated negative magnetoresistance is observed in Figure 5c, which is also resulted from the EEI. [35] Figure 5d shows the Hall resistance as a function of the magnetic field at various temperatures.…”

“…[5][6][7][8] Among these strategies, intercalation method is regarded as an effective way to introduce novel physical properties that do not DOI: 10.1002/adfm.202308356 exist in intrinsic materials due to the tuned electronic structures. For example, the 2D intercalated TMCs such as Cr 1+x Te 2 , Nb 1+x S 2 , Ta x S(Se) y , and V x S y [3,[9][10][11][12][13][14][15][16] have been synthesized. Among them, V x S y family is typical intercalated 2D materials that exhibit various physical properties and hold great potential as promising candidates for spintronic devices.…”

Anisotropic magnetoresistance: materials, models and applications

“…Contrasting the simpler types of magnetic order of the previously mentioned materials, Cr 1/3 NbS 2 is identified as a chiral helimagnet below the critical temperature T C = 111 K. Both AMR and PHE show a twofold behaviour of less than % magnitude [ 176 ]. Lastly, in V 5 S 8 , magnetization studies suggest an antiferromagnetic ordering around T N ≈ 27 K. Low-temperatures AMR measurements show a twofold AMR of up to % magnitude [ 177 ].…”