Observation of ultrafast all-optical modulation based on intersubband transition in <i>n</i>-doped quantum wells by using free electron laser

Suzuki, Toshiji; Mitsuyu, Tsuneo; Nishi, Koichi; Ohyama, Hideaki; Tomimasu, T.; Noda, Susumu; Asano, Tanemasa; Sasaki, Akio

doi:10.1063/1.117838

Cited by 27 publications

(6 citation statements)

References 7 publications

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“…We obtain a large IB-signal light absorption change of 4600 cm Ϫ1 using 500 fs control light pulses at 1 MW/cm 2 compared to 3000 cm Ϫ1 IB-absorption change with 5 ps pulses reported by Suzuki et al 15 This value of absorption change is large enough for actual device performance. The modulation depth is also considerably higher than in a symmetric undoped QW structure proposed by Lee and Malloy.…”

Section: Discussionmentioning

confidence: 70%

“…15 The drawback of the modulation scheme using a cw IB light is that the speed is limited to 1 ps due to the intersubband ͑ISB͒ energy relaxation rate of the QW. 5,6 The efficiency is also limited due to a͒ Also at: New Energy and Industrial Research Development Organization, 1-1-3 Higashi Ikebukuro, Tokyo 170, Japan; electronic mail: arup@festa.or.jp carrier accumulation at high repetition rate.…”

Section: Introductionmentioning

confidence: 99%

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Ultrafast all-optical modulation of interband-light pulses by ultrashort intersubband light pulses in semiconductor quantum wells

Neogi

Yoshida

Mozume

et al. 1999

Journal of Applied Physics

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We analyze the optical modulation of an interband resonant light pulse by intersubband resonant light pulses in a three-level quantum well system. The origin of the third order self-saturation optical nonlinearity resulting in the modification of the interband light absorption is assumed to lie in the carrier density modulation induced by the interband and intersubband transitions. The optical nonlinearity can be optimized to achieve the maximum modulation by applying control light pulses shorter than the intersubband energy relaxation time but longer than the intersubband phase relaxation time. We have also experimentally investigated the material system suitable for optical communication regime and have observed that the In0.53Ga0.47As/AlAs0.56Sb0.44 quantum well lattice matched to InP yielding an intersubband transition as short as 1.4 μm is the most suitable system for the proposed modulation scheme.

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Section: Discussionmentioning

confidence: 70%

Section: Introductionmentioning

confidence: 99%

Ultrafast all-optical modulation of interband-light pulses by ultrashort intersubband light pulses in semiconductor quantum wells

Neogi

Yoshida

Mozume

et al. 1999

Journal of Applied Physics

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“…For the L = 4.6-and 6.3-nm QC pair with 10-nm separation, the estimated τ i is 50 ps, which is much shorter than τ ex , which is a few ns. Since τ sub is generally less than a few ps and is much shorter than τ i [19], luminescence of a 4.6-nm QC decreases due to competitive inhibition and that of a 6.3-nm QCs increases due to the supply of the excitation energy from the neighboring 4.6-nm QC. As a result, the PL signal from the 6.3-nm QC was observed as the spectral peak indicated by the arrow in Fig.…”

Section: Resultsmentioning

confidence: 99%

Anti-parallel coupling of Quantum Dots with an Optical Near-Field Interaction

Kawazoe

Kobayashi

Ohtsu

2005

e-J. Surf. Sci. Nanotechnol.

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We report the direct observation of optically forbidden energy transfer between cubic CuCl quantum dots via an optical near-field interaction using time-resolved near-field photoluminescence (PL) spectroscopy. The energy transfer time and exciton lifetime were estimated from the rise and decay times of the PL pump-probe signal, respectively. We found that the exciton lifetime increased as the energy transfer time fell, which strongly supports the notion that near-field interaction between QD makes the anti-parallel dipole coupling. Namely, a quantumdots pair coupled by an optical near field has a long exciton lifetime and optically forbidden features due to its anti-parallel electric dipole pair.

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“…Among the extensive studies carried out at the FELI facility in Japan are resonant excitations of molecular vibrations [129], band discontinuities of semiconductor heterojunctions [130], and isotope separation [131]. The user facilities at this lab have become among the most productive in the world, providing over 2000 hours of beam time in the last year.…”

Section: A Millimeter Wave/far Infrared Spectramentioning

confidence: 99%

Free-electron lasers: vacuum electronic generators of coherent radiation

Freund

Neil²

1999

Proc. IEEE

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Vacuum electronic sources have shown marked improvement since the invention of the magnetron before World War II, and dramatic increases in both average powers and frequencies have been achieved. Of course, much of these gains have been achieved by the development of different devices. The typical development pattern for a given device exhibits an initial period of rapid improvement followed by a plateau determined by technological or physical limitations on the concept. Slow wave devices such as magnetrons and/or klystrons operate efficiently at frequencies up through X-band or he source of the relation ed cavity traveling wave tubes are used for various applications at frequencies ranging up through W-band. At still higher frequencies fast wave devices such as gyrotrons and free-electron lasers are required are required for high power operation.The free-electron laser concept is unique in that the mechanism is applicable across the entire electromagnetic spectrum, and free-electron lasers have been built at wavelengths from microwaves through the ultraviolet, and plans are under development for X-ray systems. Our purpose of this paper is to describe the principal directions of free-electron laser research at the present time. To this end, we first give a brief tutorial of the physics underlying the concept, and then describe the principal development paths under way.

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Observation of ultrafast all-optical modulation based on intersubband transition in n-doped quantum wells by using free electron laser

Abstract: Thermally induced charged carrier transfer and intersubband transitions in an asymmetrical coupled quantum well structure

Cited by 27 publications

References 7 publications

Ultrafast all-optical modulation of interband-light pulses by ultrashort intersubband light pulses in semiconductor quantum wells

Ultrafast all-optical modulation of interband-light pulses by ultrashort intersubband light pulses in semiconductor quantum wells

Anti-parallel coupling of Quantum Dots with an Optical Near-Field Interaction

Free-electron lasers: vacuum electronic generators of coherent radiation

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