Observation of three crystalline layers in hydrothermally grown BiFeO3 thick films

Lee, T. K.; Sung, K. D.; Kim, T. H.; Ko, Jae‐Hyeon; Jung, Jong Hoon

doi:10.1063/1.4901835

Cited by 7 publications

(2 citation statements)

References 29 publications

(26 reference statements)

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“…The ferroelectric properties of BLFMO films for t = 2.5 and 3 h become worse due to the relatively lower movable charge density near the interface as the film thickness increased [34]. Their hysteresis curves of electric polarization originated from charge migration rather than ferroelectricity for these relatively thicker films [35]. Figure 4f shows the remanent polarization of BLFMO films as a function of the deposition time.…”

Section: Methodsmentioning

confidence: 96%

Effect of deposition time on multiferroic properties of sputtered Bi0.9La0.1Fe0.9Mn0.1O3 films

Kuang

Tang

Yang

et al. 2015

J Mater Sci: Mater Electron

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Single-phase Bi 0.9 La 0.1 Fe 0.9 Mn 0.1 O 3 (BLFMO) films were successfully deposited on Pt(111)/Ti/SiO 2 / Si(100) substrates by radio frequency magnetron sputtering. The time-dependent structural and multiferroic properties of BLFMO films were examined. The X-ray diffraction patterns and micro-Raman spectra confirmed the formation of pure phase, rhombohedral structure in BLFMO. All the films had highly (012) and (024) preferred orientations. SEM images of BLFMO films exhibited dense and uniform microstructures with grain sizes of approximately 90-100 nm. The data of ferroelectric test indicated that the double remanent polarization (2P r ) value of the BLFMO film with a thickness of 412 nm was 110 lC/cm 2 at an applied electric field of 218 kV/cm. The leakage current density versus electric field curves of BLFMO films indicated that the leakage current decreased monotonically with the increase of sputtering time at a given electric field due to the decrease in total number of free carriers. Magnetism test indicated that the saturation magnetization of BLFMO films was higher when the film thickness was thinner. The results demonstrated that film thickness or deposition time had an effect on multiferroic properties of BLFMO films.

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Section: Methodsmentioning

confidence: 96%

Effect of deposition time on multiferroic properties of sputtered Bi0.9La0.1Fe0.9Mn0.1O3 films

Kuang

Tang

Yang

et al. 2015

J Mater Sci: Mater Electron

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show abstract

“…The preparation and modification of BFO films have been extensively studied. At present, various techniques have been developed to fabricate BFO films, such as pulsed laser deposition [4], magnetron sputtering [5], molecular beam epitaxy [6], hydrothermal synthesis [7], electrophoretic deposition [8], and metal organic chemical vapor deposition [9]. Moreover, sol-gel method as an alternative route has been widely used to prepare BFO films [10,11] because of its low cost, easy to & Wei Cai caiwei_cqu@163.com adjust composition and integration with devices.…”

Section: Introductionmentioning

confidence: 99%

The effects of grain size on electrical properties and domain structure of BiFeO3 thin films by sol–gel method

Lei

Cai

et al. 2015

J Mater Sci: Mater Electron

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BiFeO 3 (short for BFO) thin films with different grain sizes were fabricated via sol-gel spin-coating method. The effects of grain size on leakage behavior, dielectric, ferroelectric, piezoelectric properties and domain structure of BFO thin films have been investigated systematically. The X-ray diffraction results show that BFO thin films are rhombohedral distortion perovskite structure. Compared with the films annealed at 550°C, the grain size of BFO thin films annealed at 600°C is larger and the roughness is less, and the crystallinity and purity are higher. The leakage current density of BFO thin films with larger grain size is much lower than that of the films with smaller grain size. It is found that the conduction behavior of BFO thin films with smaller grain size transforms from Ohmic to space-charge-limited current and Fowler-Nordheim tunneling conduction as electric field increases. But there is the only transition from Ohmic conduction to space-charge-limited conduction for the thin films with larger grain size as electric field increase. The room temperature dielectric constant and remnant polarization of BFO thin films with larger grain size are higher than that of the films with smaller grain size. The ferroelectric domain size increases with the increase of grain size so that the ferroelectric polarization in BFO thin films with larger grain size enhances. Moreover, it is found that there are negatively charged ''tail to tail'' domain wall in BFO thin films with smaller grain size and positively charged ''head to head'' domain wall in the sample with larger grain size. The majority carriers including positively charged hole or oxygen vacancy assemble on negatively charged ''tail to tail'' domain wall in p-type BFO thin films with smaller grain size and result in relative higher leakage current. The piezoelectric coefficient of the films with larger grain size is much higher than that of the sample with smaller grain size.

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Effects of sputtering power, buffer layer and film thickness on ferroelectric properties of sputtered Bi0.9Gd0.1Fe0.9Co0.1O3 films

Kuang

Tang

et al. 2016

J Mater Sci: Mater Electron

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Observation of three crystalline layers in hydrothermally grown BiFeO3 thick films

Cited by 7 publications

References 29 publications

Effect of deposition time on multiferroic properties of sputtered Bi0.9La0.1Fe0.9Mn0.1O3 films

Effect of deposition time on multiferroic properties of sputtered Bi0.9La0.1Fe0.9Mn0.1O3 films

The effects of grain size on electrical properties and domain structure of BiFeO3 thin films by sol–gel method

Effects of sputtering power, buffer layer and film thickness on ferroelectric properties of sputtered Bi0.9Gd0.1Fe0.9Co0.1O3 films

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