A recurring theme in topological matter is the protection of unusual electronic states by symmetry, for example, protection of the surface states in Z 2 topological insulators by time reversal symmetry [1][2][3]. Recently interest has turned to unusual surface states in the large class of nonsymmorphic materials [4][5][6][7][8][9][10][11]. In particular KHgSb is predicted to exhibit double quantum spin Hall (QSH) states [10]. Here we report observation of a novel feature of the Hall conductivity in KHgSb in strong magnetic field B. In the quantum limit, the Hall conductivity is observed to fall exponentially to zero, but the diagonal conductivity is finite. A large gap protects this unusual zero-Hall state. We propose that, in this limit, the chemical potential drops into the bulk gap, intersecting equal numbers of right and left-moving QSH surface modes to produce the zero-Hall state.KHgSb crystallizes in the nonsymmorphic space group D 4 6h (P 6 3 /mmc). The Hg and Sb ions define honeycomb layers with AB stacking (Fig. 1a, inset) [10]. The combination of strong spin-orbit coupling, inversion symmetry and band inversion leads to nontrivial topological properties (Supplementary Sec. S1). Because the mirror Chern number C M = 2, we have double QSH states (2 left-and 2 right-moving modes) on each of the surfaces (100) and (010). The QSH states disperse along the blue lines in the inset in Fig. 1a, with velocity v g x orŷ. At their intersections, left-and right-moving QSH states are protected against hybridization by mirror symmetry across the mirror plane M z .Crystals of KHgSb grow as plates with the broad faces normal toẑ [001], and side faces identified with (100) and (010). Hall measurements in a field B ẑ, with current in the x-y plane can detect the QSH states, provided the chemical potential µ lies inside the bulk gap. (Our measurements do not couple to the hourglass modes [12,13] because they disperse alongΓZ with v g ẑ.)We report results from two batches of crystals (Supplementary Secs. S2 and S3, and Table 1). In batch A (nominally undoped), Hg vacancies lead to a carrier density (n-type) n ∼ 9.5 × 10 17 cm −3 (determined from the weak-B Hall effect). In batch B, Bi dopants were added to reduce n by a factor of 4. In both batches, µ lies low in the conduction band when B = 0. In batch A, the inplane resistivity ρ a (B = 0) is nearly independent of temperature T , with a mobility µ e ∼3,500 cm 2 /Vs limited by dominant impurity scattering. In batch B, ρ a increases by 30 − 40% between 40 and 4 K (Fig. 1a). (The sharp downturns at 4 K are caused by trace superconductivity from exuded Hg ions at the crystal surface; they do not affect the conclusions.) Batch A crystals display strong Shubnikov de Haas (SdH) oscillations. In Fig. 1b, SdH oscillations in the resistivity ρ xx (with B ẑ) are plotted at selected T . At the field B QL at which ρ xx has a deep minimum, µ enters the lowest Landau level (LLL). From the damping of the SdH amplitudes versus T we infer a small in-plane mass m a = 0.05m e (m e is the fre...