Observation of the Si(111)7 × 7 atomic structure using non-contact scanning nonlinear dielectric microscopy

Hirose, R.; Ohara, Koya; Cho, Yasuo

doi:10.1088/0957-4484/18/8/084014

Cited by 31 publications

(24 citation statements)

References 9 publications

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“…The IðtÞ image shows the atomic contrast, which is consistent with that previously reported. 7 This implies that the tunneling current was rectified and that the dc current was generated by the asymmetric nonlinear current-voltage characteristics at the tunneling junction.…”

Section: Crosstalk Considerationmentioning

confidence: 99%

“…6 In addition to initially targeted ferroelectric materials, 1 semiconductor surfaces have recently been investigated by this microscopy. 7 Non-contact SNDM (NC-SNDM) has been developed based on higher-order nonlinear dielectric measurements and it permits nondestructive and simultaneous imaging of the topography and dipole moments with an atomic resolution. 8 The 2nd order nonlinear dielectric constant e 3 measured at each lateral position of the tip is closely related to the local dipole moments of a sample surface, since the 2nd order nonlinearity depends on an asymmetric response of local electric displacement to the external electric field.…”

mentioning

confidence: 99%

“…NC-SNDM imaging of a Si(111)-(7 Â 7) surface generated a considerable tunneling current of several tens of nanoamperes and its time average simultaneously produced atomically resolved images with NC-SNDM images. 7 The principle of SNDM is based entirely on classical electromagnetism; it does not depend on quantum mechanical effects. Nevertheless, experimental results demonstrate that NC-SNDM has the potential to detect a non-uniform spatial distribution of a capacitive component, which may be a nonclassical capacitance, 12 that varies on an atomic scale.…”

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confidence: 99%

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Simultaneous measurement of tunneling current and atomic dipole moment on Si(111)-(7 × 7) surface by noncontact scanning nonlinear dielectric microscopy

Yamasue

Cho

2013

Journal of Applied Physics

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Non-contact scanning nonlinear dielectric microscopy (NC-SNDM) can resolve the topography and dipole moment distribution of a Si(111)-(7 × 7) surface on an atomic level. We discuss the origin of the atomic contrast in dipole moment images based on simultaneously acquired time-averaged tunneling current images. The dipole moment images are found to have the same characteristics as the simultaneously acquired current images. This similarity between these two images does not originate from circuit crosstalk since it is suppressed by our circuit design that decouples the tip-sample capacitance and the tunneling current. Constant-height images also indicate that the atomic contrast is not artificially caused by feedback crosstalk. These results suggest that the atomic contrast is due to the variation in the tip-sample capacitance caused by modulation of atomic dipole moments by the local density of states of the surface.

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Section: Crosstalk Considerationmentioning

confidence: 99%

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confidence: 99%

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confidence: 99%

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Simultaneous measurement of tunneling current and atomic dipole moment on Si(111)-(7 × 7) surface by noncontact scanning nonlinear dielectric microscopy

Yamasue

Cho

2013

Journal of Applied Physics

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“…In the case of semiconductor applications, the 7×7 surface reconstruction of clean Si surfaces was detected by the high-resolution observation in a high vacuum [8]. We have also succeeded in visualizing the charges in nonvolatile flash memory by using SNDM [9,10].…”

Section: Introductionmentioning

confidence: 96%

Observation of dopant profile of transistors using scanning nonlinear dielectric microscopy

Honda

Ishikawa

Cho

2010

J. Phys.: Conf. Ser.

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Abstract. We have demonstrated that scanning nonlinear dielectric microscopy (SNDM) exhibits high performance and high resolution in observing the dopant concentration profile of transistors. In this study, we have measured standard Si samples, which are known to have onedimensional dopant concentration values, calibrated by using conventional secondary ion mass spectrometry (SIMS). Good quantitative agreement between the SNDM signals and dopant density values was obtained by SIMS. We succeeded in visualizing high-resolution dopant profiles in n-and p-type channel MOSFET with 40 nm gate channels. It is considered that SNDM would be an effective method in measuring the quantitative two-dimensional dopant profiles of semiconductor devices. Finally, we have observed the dopant depth profiles of an SRAM memory cell by using SNDM, and succeeded in detecting the insufficient extension ion implantation in the PMOS transistor area.

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“…Although the stripe pitch was large surface of ferroelectrics, so these experimental results are compared by the size of actual data bits, this experiments available for the contacting mode. On the other hand, made sense sufficiently as a feasibility demonstration non-contact mode is achieved by detecting the higher-concering reading speed, because the intensity of read order nonlinear dielectric responses [5][6][7]. The detail of signal was not dependent on the domain size unless the the operation mechanism is mentioned later.…”

Section: Introductionmentioning

confidence: 99%

Non-Contact Probe Control and High-Speed Writing for Rotated-Disk-Type Ferroelectric Data Storage Devices

Hiranaga¹,

Uda²,

Kurihashi³

et al. 2007

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics

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In this study, several read/write tests were speed domain switching in ferroelectrics. The capability conducted using novel type of ferroelectric data storage of high-speed data writing was demonstrated using this system, which was equipped with spindle motor, under system. the conditions relatively close to the actual operations.Additionally, the novel technique of probe-height Firstly, high-speed data transfer was demonstrated control was developed by using the R/W head based on regarding both reading and writing. Subsequently, the scanning nonlinear dielectric microscopy (SNDM) novel non-contact probe-height control technique was technique, which realized R/W with keeping the probe discussed.from coming in contact with the recording medium. It is expected that this technique give a solution to the INTRODUCTION problem of probe abrasion and contribute to realization of the highly reliable probe storage devices. Various data storage methods based on scanning probe microscopy techniques have been proposed to date ROTATED-DISK-TYPE FERROELECTRIC DATA [1,2]. Multi-probe-type read/write (R/W) heads have STORAGE SYSTEM been employed in most of these probe data storage, because R/W speed per probe are low. However, the A novel type of a ferroelectric data storage system applicability of the multi-probe technology is limited, based on SNDM has been developed in order to conduct because there is a restriction that the size of R/W circuit fast R/W tests under several conditions. The outstanding per probe must be reduced enough to be integrated on feature of this system is that high-accuracy spindle motor small packages.is introduced into a positioning section in place of piezo On the other hand, the past studies on ferroelectric scanners, which were used in conventional probe storage domain formation in nanoscale area have revealed that systems. Figure 1 shows the schematic diagram of this ferroelectrics, especially LiTaO3 single crystal, have a system. The rotation speed of the spindle motor can be great deal of potential for mass-storage device controlled in the range of 40 to 20000 rpm. applications [3,4]. It is noteworthy that domain switching A conventional SNDM circuit is used as an R/W head. time is less than 1 ns for ultra-thin (<20 nm) ferroelectric That is, the head is composed of a sharp-pointed recording media [4]. Thus rotated-disk-type data storage conductive probe and an oscillator. When reading data system was developed in order to take advantage of high-written on a ferroelectric recording medium, polarization

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Observation of the Si(111)7 × 7 atomic structure using non-contact scanning nonlinear dielectric microscopy

Cited by 31 publications

References 9 publications

Simultaneous measurement of tunneling current and atomic dipole moment on Si(111)-(7 × 7) surface by noncontact scanning nonlinear dielectric microscopy

Simultaneous measurement of tunneling current and atomic dipole moment on Si(111)-(7 × 7) surface by noncontact scanning nonlinear dielectric microscopy

Observation of dopant profile of transistors using scanning nonlinear dielectric microscopy

Non-Contact Probe Control and High-Speed Writing for Rotated-Disk-Type Ferroelectric Data Storage Devices

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