2002
DOI: 10.1063/1.1449527
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Observation of the Mott–Gurney law in tris (8-hydroxyquinoline) aluminum films

Abstract: We show that tris (8-hydroxyquinoline) aluminum (Alq3) thin films produced and characterized under ultrahigh vacuum conditions present a well-defined squared-law dependence of the injected current on the applied voltage at applied electric fields of the order of 0.25–1 MV/cm. From this, one derives an electric-field-independent electron mobility of the order of 10−7 cm2/(V s), with a variation between different samples of about one order of magnitude. Observations of current–voltage characteristics with clear … Show more

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Cited by 89 publications
(67 citation statements)
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“…By least-square fitting, for low biases (V=0-0.4 V) as listed in Table 1, a L ¼ 1.270.1 indicates that the transport behavior is in a mixed regime governed by ohmic law (a ¼ 1) and Child-Langmuir law (a ¼ 1.5). However, as the electric field increases, a transition was observed from an ohmic law to a Mott-Gurney law, and during the transition a large value of a ¼ 8 was obtained, which may be caused by the onset of carrier injection and trap filling [24]. Based on this finding, the scattered values of a H for high biases (V ¼ 0.5-1.0 V) ranging from 2.1 to 4.7 (as listed in Table 1) indicate that the electric fields applied to these samples are near the onset of the above-mentioned transition.…”
Section: Resultsmentioning
confidence: 92%
See 1 more Smart Citation
“…By least-square fitting, for low biases (V=0-0.4 V) as listed in Table 1, a L ¼ 1.270.1 indicates that the transport behavior is in a mixed regime governed by ohmic law (a ¼ 1) and Child-Langmuir law (a ¼ 1.5). However, as the electric field increases, a transition was observed from an ohmic law to a Mott-Gurney law, and during the transition a large value of a ¼ 8 was obtained, which may be caused by the onset of carrier injection and trap filling [24]. Based on this finding, the scattered values of a H for high biases (V ¼ 0.5-1.0 V) ranging from 2.1 to 4.7 (as listed in Table 1) indicate that the electric fields applied to these samples are near the onset of the above-mentioned transition.…”
Section: Resultsmentioning
confidence: 92%
“…4 shows the dark and illuminated J-V characteristics of two typical ITO/CuPc/C 60 /Ag devices fabricated at T sub ¼ 30 and 90 1C, respectively. For dark J-V curves, in view of the very thin layer thickness of the samples, a space charge limited current (SCLC) can dominate the transport behaviors [23,24]. Thus, J-V behavior follows a simple power law as JpV a , where a=1.5 for the case of negligible energy loss of the carriers and known as Child-Langmuir law, and a=2.0 for the case of constant mobility and known as Mott-Gurney law.…”
Section: Resultsmentioning
confidence: 97%
“…The mobility in the NPOX is found to be independent of the applied field. This independence of the mobility on the electric field was also observed in Tris(8-hydroxyquiniline)Al, Alq 3 , when the samples were prepared under ultrahigh vacuum conditions, as described by Kiy et al [25]. Therefore, in Alq 3 , deviations from J ∼ V 2 were attributed to the presence of impurities.…”
Section: Electrical Studiesmentioning
confidence: 60%
“…Relatively large carrier density and symmetric I-V characteristics for the Au-PPI-Au structure differs significantly in the current density magnitude from Au-PPI-Al asymmetric I-V characteristics. The former structure is suggested to reveal the space charge limited character with current voltage characteristic consistent with the Mott-Gurney law [10][11][12][13]:…”
Section: I-v Characteristics Results and Discussionmentioning
confidence: 99%