We demonstrate optically pumped dynamic nuclear polarization of 29 Si nuclear spins that are strongly coupled to paramagnetic color centers in 4H-and 6H-SiC. The 99 ± 1% degree of polarization at room temperature corresponds to an effective nuclear temperature of 5 K. By combining ab initio theory with the experimental identification of the color centers' optically excited states, we quantitatively model how the polarization derives from hyperfine-mediated level anticrossings. These results lay a foundation for SiC-based quantum memories, nuclear gyroscopes, and hyperpolarized probes for magnetic resonance imaging.
Main text:Silicon carbide is a promising material for quantum electronics at the wafer scale. It is both amenable to sophisticated device processing [1] and a host for several types of vacancy-related paramagnetic color centers with remarkable attributes . Much like the diamond nitrogen-vacancy center [24, 25], these color centers localize electronic states that can exhibit millisecond-long spin coherence times [18], singlespin addressability through confocal optically detected magnetic resonance (ODMR) [18,19], and ODMR persistence up to room temperature [10,11,14,19]. Although fluctuating nuclear spins are a principal source of electronic spin decoherence [26], their presence is not purely detrimental. If polarized and controlled, nuclear spins in SiC would be a technologically important resource.In this Letter, we show that near-infrared light can nearly completely polarize populations of 29 Si nuclear spins in SiC. This process is based on dynamic nuclear polarization (DNP) [27,28]: the optically pumped polarization of of electron spins bound to either neutral divacancy [4,