Observation of the antiferromagnetic spin Hall effect

Chen, Xianzhe; Shi, Shu; Shi, Guangyuan; Fan, Xiaolong; Song, Cheng; Zhou, Xiaofeng; Bai, Hua; Liao, Liyang; Zhou, Yongjian; Zhang, Hanwen; Li, Ang; Chen, Yanhui; Han, Xiao; Jiang, Shan; Zhu, Zengwei; Wu, Huaqiang; Wang, Xiangrong; Xue, Desheng; Yang, Hyunsoo; Pan, Feng

doi:10.1038/s41563-021-00946-z

Cited by 146 publications

(101 citation statements)

References 30 publications

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“…According to the aforementioned discussion, oxide interface with high surface active energy is critical to the formation of Co-based interfacial PMA. To support this viewpoint, control experiment was conducted in sample with the structure of Si/SiO 2 //HfO 2 / (Co/Pd) 2 , [21] where HfO 2 was inserted between SiO 2 and Co. Because the vacuum is not broken during the deposition of HfO 2 and Co layers, therefore the inserted HfO 2 surface satisfies the condition of high surface active energy. As shown in Figure 6b,c, robust PMA was obtained when Co/Pd multilayers grown on HfO 2 buffer layer, implying the oxide interface with high surface active energy is really important for the formation of interfacial PMA.…”

Section: Resultsmentioning

confidence: 99%

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Plasma Etching‐Assisted Perpendicular Magnetic Anisotropy

Bai

Hao

Zhou

et al. 2021

Physica Status Solidi (a)

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Ferromagnetism with perpendicular magnetic anisotropy (PMA) receives continuous attention. But, the PMA is always limited by materials system, the assistance from suitable buffer layers such as Pt and Ta is essential. A general method for the generation of PMA on various systems is pursued. Herein, it is shown that preparatory plasma etching of oxide substrate produces robust PMA in subsequent grown ferromagnetic multilayers, out‐of‐plane hysteresis loop is rectangular with remanence close to 100%. In contrast, without the preparatory plasma etching, out‐of‐plane hysteresis loop of subsequent grown ferromagnetic multilayers is very oblique, the calculated uniaxial anisotropic constant is one order of magnitude smaller than the former one. The enhancements of PMA are observed in distinct oxide substrates including Si/SiO2, Al2O3, LaAlO3, and MgO, indicating the interfacial plasma etching technique can be used for various oxide substrates to obtain PMA. The promotion of Co–O hybridization is proposed to be the dominant reason for the enhancement of PMA, which is supported by the control experiment. This finding provides opportunity for the formation of interfacial PMA on crystalline oxide substrates, and expands the material selection for achieving PMA.

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Section: Resultsmentioning

confidence: 99%

“…Especically, this method would contribute to the investigation of antiferromagnetic spintronics. [20,21]…”

Section: Resultsmentioning

confidence: 99%

Plasma Etching‐Assisted Perpendicular Magnetic Anisotropy

Bai

Hao

Zhou

et al. 2021

Physica Status Solidi (a)

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“…Furthermore, it has been shown that magnetic Weyl particles are the origin of the large fictitious fields (10,30). It is an interesting subject to clarify how they are related to the novel spintronic phenomena such as the MSHE found in the topological antiferromagnet (41,(136)(137)(138).…”

Section: Discussionmentioning

confidence: 99%

“…These demonstrate that spin Hall properties in noncollinear antiferromagnets are much richer than those in the commonly studied strongly spin-orbit-coupled paramagnetic metals. In addition, the MSHE induces out-of-plane spin accumulation and, thus, is useful to electrically switch the perpendicularly oriented magnetic moment under zero field (138). This may be related to the facet dependence of SOT found in another noncollinear antiferromagnet, Mn 3 Ir (139).…”

Section: Magnetic Spin Hall Effectmentioning

confidence: 95%

Topological Magnets: Functions Based on Berry Phase and Multipoles

Nakatsuji

Arita

2022

Annu. Rev. Condens. Matter Phys.

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Macroscopic responses of magnets are often governed by magnetization and, thus, have been restricted to ferromagnets. However, such responses are strikingly large in the newly developed topological magnets, breaking the conventional scaling with magnetization. Taking the recently discovered antiferromagnetic (AF) Weyl semimetals as a prime example, we highlight the two central ingredients driving the significant macroscopic responses: the Berry curvature enhanced because of nontrivial band topology in momentum space, and the cluster magnetic multipoles in real space. The combination of large Berry curvature and multipole enables large macroscopic responses such as the anomalous Hall and Nernst effects, the magneto-optical effect, and the novel magnetic spin Hall effect in antiferromagnets with negligible net magnetization, but also allows us to manipulate these effects by electrical means. Furthermore, nodal-point and nodal-line semimetallic states in ferromagnets may provide the strongly enhanced Berry curvature near the Fermi energy, leading to large responses beyond the conventional magnetization scaling. These significant properties and functions of the topological magnets lay the foundation for future technological development such as spintronics and thermoelectric technology. Expected final online publication date for the Annual Review of Condensed Matter Physics, Volume 13 is March 2022. Please see http://www.annualreviews.org/page/journal/pubdates for revised estimates.

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“…[51] Besides, magnetoelectric coupling effect in BTO/EuO has been reported, [20] which we believe may be related to the 3d-5d orbital coupling because 3d orbitals determine the ferroelectricity of BTO and 5d orbitals influence the magnetic features of EuO. Bulk EuTiO 3 in cubic lattice is a multiferroic material with coexistence of G-type antiferromagnetism and quantum paraelectric order, [52] while EuTiO 3 film under biaxial tensile strain is a strong ferroelectric ferromagnet owing to spin-lattice coupling, [53][54][55] suggesting the multi-orbital stronglycorrelated electronic characteristics. Orbital coupling between rare-earth 5d and transition-metal 3d states may provide a chargetransfer pathway from electron-donating Eu 2+ to titanium oxide semiconductors.…”

Section: Charge Transfer and Orbital Hybridizationmentioning

confidence: 99%

Designing All‐Inorganic EuO‐Sensitized TiO₂ Solar Cell from 4f‐3d Composite Bandgap Structure

Wang

Zhu

Pan

et al. 2021

Advcd Theory and Sims

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TiO 2 dye-sensitized solar cells (DSSCs) have blazed a new trail out of traditional silicon-based photovoltaics. However, extensive applications of DSSCs are limited by the use of organic photosensitizers and liquid electrolytes, which raises strict requirements on dye synthesis and cell encapsulation. Considering the electron-donating tendency and optical activity of Eu 2+ , EuO semiconductor is chosen as inorganic substitution of organic dyes based on Eu 2+ ↔Eu 3+ redox transition. Through first-principle calculations, 4f-3d composite bandgap is found in TiO 2 /EuO heterostructure, reducing the bandgap of pure TiO 2 from 3.2 to 0.99 eV. This energy corresponds to near-infrared photon and thus covers the whole range of visible light, which will significantly enhance the light-absorption efficiency of TiO 2 . Similar electronic feature also appears in ATiO 3 (A = Sr, Ba)/EuO interfaces. The bandgap value is critically dependent on bonding type and geometry structure of TiO 6 octahedra at the interface. On this basis, all-inorganic EuO-sensitized TiO 2 solar cell is theoretically designed, where EuO serves as photosensitizer to replace dye molecules and inject electrons into TiO 2 anode under light excitation. This finding not only provides prospect for all-inorganic DSSCs, but also sheds light on high-efficiency TiO 2 -based photocatalysis and EuO-relevant spintronics with rich interfacial physics.

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Observation of the antiferromagnetic spin Hall effect

Cited by 146 publications

References 30 publications

Plasma Etching‐Assisted Perpendicular Magnetic Anisotropy

Plasma Etching‐Assisted Perpendicular Magnetic Anisotropy

Topological Magnets: Functions Based on Berry Phase and Multipoles

Designing All‐Inorganic EuO‐Sensitized TiO₂ Solar Cell from 4f‐3d Composite Bandgap Structure

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Observation of the antiferromagnetic spin Hall effect

Cited by 146 publications

References 30 publications

Plasma Etching‐Assisted Perpendicular Magnetic Anisotropy

Plasma Etching‐Assisted Perpendicular Magnetic Anisotropy

Topological Magnets: Functions Based on Berry Phase and Multipoles

Designing All‐Inorganic EuO‐Sensitized TiO2 Solar Cell from 4f‐3d Composite Bandgap Structure

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Product

Resources

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Designing All‐Inorganic EuO‐Sensitized TiO₂ Solar Cell from 4f‐3d Composite Bandgap Structure