Observation of Terahertz-Induced Magnetooscillations in Graphene

Mönch, Erwin; Bandurin, Denis; Дмитриев, И. А.; Phinney, Isabelle; Yahniuk, Ivan; Taniguchi, Takashi; Watanabe, Kenji; Jarillo‐Herrero, Pablo; Ganichev, Sergey

doi:10.1021/acs.nanolett.0c01918

Cited by 21 publications

(36 citation statements)

References 85 publications

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“…The former turns out obvious and the latter is expected according to our theory as the frequency shows up in the denominator of the amplitude. These results agree with experimental results 39 and with the frequency dependence with standard MIRO obtained in semiconductor platforms and MW. More simulations have been run at higher frequencies confirming the trends in terms of number of oscillations and decreasing amplitude.…”

Section: Resultssupporting

confidence: 91%

“…The interest rises if instead of 2D Schrödinger electrons we use the paradigmatic 2D platform nowadays, i.e., monolayer graphene or other graphene structures 38 . In this way, an experimental work 39 has been recently published probing the rise of MIRO-like photovoltage oscillations in h-BN encapsulated graphene keeping most of MIRO characteristics. On the other hand, a previous and pioneering theoretical work predicting radiationinduced resistance oscillations in monolayer and bilayer graphene 40 was reported.…”

Section: Introductionmentioning

confidence: 99%

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Photovoltage Oscillations in Encapsulated Graphene

Iñarrea

Platero

2022

Preprint

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We theoretically analyze the rise of photovoltage oscillations in hexagonal boron-nitride (h-BN) encapsulated monolayer graphene (h-BN/graphene/h-BN) when irradiated with terahertz radiation. We use an extension of the radiation-driven electron orbit model, successfully applied to study the oscillations obtained in irradiated magnetotransport of GaAs/AlGaAs heterostructures. The extension takes mainly into account that now the carriers are massive Dirac fermions. Our simulations reveal that the photovoltage in these graphene systems presents important oscillations similar to the ones of irradiated magnetoresistance in semiconductor platforms but in the terahertz range. We also obtain that these oscillations are clearly affected by the voltages applied to the sandwiched graphene: a vertical gate voltage between the two hBN layers and an external positive voltage applied to one of the sample sides. The former steers the carrier effective mass and the latter the photovoltage intensity and the oscillations amplitude. The frequency dependence of the photo-oscillations is also investigated.

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Section: Resultssupporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Photovoltage Oscillations in Encapsulated Graphene

Iñarrea

Platero

2022

Preprint

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“…In contrast, the resistively detected magnetotransport signal of the devices exhibits qualitatively different responses depending on the charge carrier density. While low carrier density samples (n < 3.5 ×10 11 cm −2 ) exclusively display a conventional response due to heating of the electron system during resonant microwave absorption at CR [23][24][25], in the higher density regime the response is dominated by the less common MIRO [26][27][28]. No CR related feature was detected in the magnetoresistance of high density samples.…”

Section: Introductionmentioning

confidence: 93%

Microwave response of interacting oxide two-dimensional electron systems

et al. 2020

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We present an experimental study on microwave illuminated high mobility MgZnO/ZnO based twodimensional electron systems with different electron densities and, hence, varying Coulomb interaction strength. The photoresponse of the low-temperature dc resistance in perpendicular magnetic field is examined in low and high density samples over a broad range of illumination frequencies. In low density samples a response due to cyclotron resonance (CR) absorption dominates, while high-density samples exhibit pronounced microwaveinduced resistance oscillations (MIRO). Microwave transmission experiments serve as a complementary means of detecting the CR over the entire range of electron densities and as a reference for the band mass unrenormalized by interactions. Both CR and MIRO-associated features in the resistance permit extraction of the effective mass of electrons but yield two distinct values. The conventional cyclotron mass representing center-of-mass dynamics exhibits no change with density and coincides with the band electron mass of bulk ZnO, while MIRO mass reveals a systematic increase with lowering electron density consistent with renormalization expected in interacting Fermi liquids.

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“…Electric tunability of the quantum state of superconductive devices has been demonstrated successfully by introducing a ballistic or very clean semiconductor in proximity to the superconducting device. 15 In several such devices, the gating mechanism is based on voltagedriven charge injection of holes or electrons from the semiconductor either directly or by means of a field effect. The resultant change in the superconductor charge-carrier density (𝑛 s ) is accompanied by direct voltage control of the common quantum pseudo-wavefunction of the superconducting electrons: 𝑛 s = |ψ| 2 .…”

mentioning

confidence: 99%

Nonvolatile voltage-tunable ferroelectric-superconducting quantum interference memory devices

Suleiman

Sarott

Trassin

et al. 2021

Applied Physics Letters

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Superconductivity serves as a unique solid-state platform for electron interference at a devicerelevant lengthscale, which is essential for quantum information and sensing technologies. As opposed to semiconducting transistors that are operated by voltage biasing at the nanometer scale, superconductive quantum devices cannot sustain voltage and are operated with magnetic fields, which impose a large device footprint, hindering miniaturization and scalability. Here we introduce a system of superconducting materials and devices that have a common interface with a ferroelectric layer. An amorphous superconductor was chosen for reducing substrate-induced misfit strain and for allowing low-temperature growth. The common quantum pseudowavefunction of the superconducting electrons was controlled by the non-volatile switchable polarization of the ferroelectric by means of voltage biasing. A controllable change of 21% in the critical temperature was demonstrated for a continuous film geometry. Moreover, a controllable change of 54% in the switching current of a superconducting quantum interference device (SQUID) was demonstrated. The ability to voltage bias superconducting devices together with the non-volatile nature of this system paves the way to quantum-based memory devices.

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Observation of Terahertz-Induced Magnetooscillations in Graphene

Cited by 21 publications

References 85 publications

Photovoltage Oscillations in Encapsulated Graphene

Photovoltage Oscillations in Encapsulated Graphene

Microwave response of interacting oxide two-dimensional electron systems

Nonvolatile voltage-tunable ferroelectric-superconducting quantum interference memory devices

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