“…6) It is believed that hot-phonon decay can be evaluated in terms of the LO phonon lifetime, which determines the hot-phonon effects, i.e., a sufficiently long LO phonon lifetime reduces the rate at which hot electrons lose energy and reduces the carrier mobility. [7][8][9] Electric field-induced Raman scattering, which allows us to probe the changes of the electric fields in space-charge layers at semiconductor surfaces and interfaces, has also been widely used to investigate the LO phonons of GaAs or CdS under a strong electric field (∼10 6 V=m), 10,11) but has been used rarely for GaN. Consequently, exploring the LO phonon property is crucial for understanding GaN, particularly under nonequilibrium conditions.…”