Observation of structural defects in GaN/InGaN multi-quantum wells grown on semipolar (112¯2) substrate using cathodoluminescence in transmission electron microscopy
Mi-Hyang Sheen,
Yong-Hee Lee,
Okhyun Nam
et al.
Abstract:Defect structures of semipolar GaN thin film, grown on the m-plane of sapphire, were investigated using the home-built cathodoluminescence (CL) stage in TEM. The CL maps with high spatial resolution identify the type of basal plane stacking faults (BSFs) and visualize their distribution. I1-BSF type defects had the highest population and the I2-BSF type defect was revealed in the form of thin strips with less population. Partial dislocations and basal stacking fault-related defects existed in the form of segme… Show more
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