Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor

Anh, Lê Đức; Hai, Pham Nam; Tanaka, Masaaki

doi:10.1038/ncomms13810

Cited by 48 publications

(47 citation statements)

References 40 publications

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“…The primary conclusion from examining the electronic structure of 2:1 MS/CrI 3 would be the presence of a spin independent bandgap obtained for a ferromagnetic 2-D semiconductor. This, to our knowledge, has not been reported previously 69,70 . A phenomenological application of this system is realized in spin-resolved magnetic storage devices 71 , where the operating voltage across the two spin states would remain the same.…”

Section: Resultssupporting

confidence: 48%

Substrate induced electronic phase transitions of CrI$$_{3}$$ based van der Waals heterostructures

Chakraborty

Ravikumar

2021

Sci Rep

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We perform first principle density functional theory calculations to predict the substrate induced electronic phase transitions of CrI$$_{3}$$ 3 based 2-D heterostructures. We adsorb graphene and MoS$$_{2}$$ 2 on novel 2-D ferromagnetic semiconductor—CrI$$_{3}$$ 3 and investigate the electronic and magnetic properties of these heterostructures with and without spin orbit coupling (SOC). We find that when strained MoS$$_{2}$$ 2 is adsorbed on CrI$$_{3}$$ 3 , the spin dependent band gap which is a characteristic of CrI$$_{3}$$ 3 , ceases to remain. The bandgap of the heterostructure reduces drastically ($$\sim$$ ∼ 70%) and the heterostructure shows an indirect, spin-independent bandgap of $$\sim$$ ∼ 0.5 eV. The heterostructure remains magnetic (with and without SOC) with the magnetic moment localized primarily on CrI$$_{3}$$ 3 . Adsorption of graphene on CrI$$_{3}$$ 3 induces an electronic phase transition of the subsequent heterostructure to a ferromagnetic metal in both the spin configurations with magnetic moment localized on CrI$$_{3}$$ 3 . The SOC induced interaction opens a bandgap of $$\sim$$ ∼ 30 meV in the Dirac cone of graphene, which allows us to visualize Chern insulating states without reducing van der Waals gap.

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Section: Resultssupporting

confidence: 48%

Substrate induced electronic phase transitions of CrI$$_{3}$$ based van der Waals heterostructures

Chakraborty

Ravikumar

2021

Sci Rep

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“…for the origin in O 2 (C=−1). The phase diagram figure 4(b) can also be obtained according to equations (21) and (22) which correspond to the green region (C = 1) and the blue region (C=−1), respectively. The process of the topological phase transition induced by the magnetization orientation tuning is clearly presented from (d) to (f) in figure 4, corresponding to the origin moving out of the ellipse O 1 shown in figure 3(b).…”

Section: Topological Phase Transitionsmentioning

confidence: 99%

“…In this paper, we propose to realize a Chern insulator in a 2DES embedded in the interface of a semiconductor heterostructure which is manufactured by growing a zinc-blende ferromagnetic (FM) semiconductor, such as (In, Fe) As [21,22], on another zinc-blende nonmagnetic semiconductor, as shown in figure 1(a). Because the Dresselhaus spin-orbit coupling (SOC) [23] is proved to be present in semiconductors with the zinc-blende crystal structure [24], a 2DES formed by such a semiconductor heterostructure also has the Dresselhaus SOC.…”

Section: Introductionmentioning

confidence: 99%

Chern insulator in a ferromagnetic two-dimensional electron system with Dresselhaus spin–orbit coupling

Chang

2019

New J. Phys.

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We propose a Chern insulator in a two-dimensional electron system with Dresselhaus spin-orbit coupling, ferromagnetism, and spin-dependent effective mass. The analytically-obtained topological phase diagrams show the topological phase transitions induced by tuning the magnetization orientation with the Chern number varying between 1, 0, −1. The magnetization orientation tuning shown here is a more practical way of triggering the topological phase transitions than manipulating the exchange coupling that is no longer tunable after the fabrication of the system. The analytic results are confirmed by the band structure and transport calculations, showing the feasibility of this theoretical proposal. With the advanced and mature semiconductor engineering today, this Chern insulator is very possible to be experimentally realized and also promising to topological spintronics.

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“…In contrast to the traditional p-type Mn-doped FMSs such as (Ga,Mn)As, novel Fe-doped III-V FMSs have recently attracted much attention, because Fe-doped FMSs can accommodate both n-and p-type carriers and exhibit ferromagnetism with high Curie temperature T C (> 300 K) [5,9,10]. Using the p-type and/or n-type Fe-doped FMSs, spintronics devices have already been demonstrated [6,7,11,12]. (In 1−x ,Fe x )As codoped with Be (referred to as (In,Fe)As:Be hereafter) is the first n-type FMS [13,14], where the Be ions act as double donors [15].…”

Section: Introductionmentioning

confidence: 99%

Minority-spin impurity band in n -type (In,Fe)As: A materials perspective for ferromagnetic semiconductors

et al. 2021

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Fully understanding the properties of n-type ferromagnetic semiconductors (FMSs), complementary to the mainstream p-type ones, is a challenging goal in semiconductor spintronics because ferromagnetism in n-type FMSs is theoretically nontrivial. Soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) is a powerful approach to examine the mechanism of carrier-induced ferromagnetism in FMSs. Here our SX-ARPES study on the prototypical n-type FMS (In,Fe)As reveals the entire band structure, including the Fe-3d impurity bands (IBs) and the host InAs ones, and provides direct evidence for electron occupation of the InAs-derived conduction band (CB). A minority-spin Fe-3d IB is found to be located just below the conduction-band minimum (CBM). The IB is formed by the hybridization of the unoccupied Fe 3d states with the occupied CBM of InAs in a spin-dependent way, resulting in the large spin polarization of CB. The band structure with the IB is varied with band filling, which cannot be explained by the rigid-band picture, suggesting a unified picture for realization of carrier-induced ferromagnetism in FMS materials.

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Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor

Cited by 48 publications

References 40 publications

Substrate induced electronic phase transitions of CrI$$_{3}$$ based van der Waals heterostructures

Substrate induced electronic phase transitions of CrI$$_{3}$$ based van der Waals heterostructures

Chern insulator in a ferromagnetic two-dimensional electron system with Dresselhaus spin–orbit coupling

Minority-spin impurity band in n -type (In,Fe)As: A materials perspective for ferromagnetic semiconductors

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