Observation of Space-Charge-Limited Transport in InAs Nanowires

Abstract

Abstract-Recent theory and experiment have suggested that space-charge-limited transport should be prevalent in high aspect-ratio semiconducting nanowires. We report on InAs nanowires exhibiting this mode of transport and utilize the underlying theory to determine the mobility and effective carrier concentration of individual nanowires, both of which are found to be diameter-dependent. Intentionally induced failure by Joule heating supports the notion of space-charge limited transport and proposes reduced thermal conductivity due to the nanowires' polymorphism.

Charge transport in single CuO nanowires

“…The IV curves show nonlinear behavior, and an excellent fit to the power law relation (I $ V a )-characteristic of SCLC behavior is obtained. 16,20,21 Here, a varies from 3.6 at 120 K to 1.3 at 400 K. This indicates the IV curves become more linear (ohmic) as temperature increases.…”

Probing the electrical transport properties of intrinsic InN nanowires

“…19 A thorough investigation of the SCL I-V characteristics, together with their correlation to the ohmic conduction under low biasing condition, can provide critical information on the free carrier concentration, electron mobility, and charge trap characteristics of semiconducting nanowires. [19][20][21][22][23][24] To date, charge carrier transport properties of semiconductor nanowires are commonly studied through nanowire field-effect transistors. 7,8,20,[24][25][26][27][28][29][30] Alternatively, they can be obtained by nanoprobing an individual nanowire in a scanning electron microscope (SEM) environment.…”

“…7,8,20,[24][25][26][27][28][29][30] Alternatively, they can be obtained by nanoprobing an individual nanowire in a scanning electron microscope (SEM) environment. 19,[21][22][23] This nanoprobing technique provides the distinct advantage that the surface and interface properties of nanowires are not perturbed by any chemical treatment or photolithography process.…”

“…36 Such nonlinear I-V characteristics at relatively large bias are consistent with the SCL conduction. 20,22,24,27,28 From the slope of the low-bias I-V characteristics, and neglecting the contact resistance, 37 the individual nanowire resistance is estimated to be in the range of MX. The resistivity q of each nanowire can be further derived by considering the nanowire dimension (illustrated in Fig.…”

Nanoscale Transport Measurements with Multiple Probe Scanning Tunneling Microscopy

“…While two-dimensional heterostructures made up of these materials generally suffer from extreme lattice mismatch, the successful growth of nanowires with improved crystal structure offers new perspectives in integrating these materials into fast and low-power transistors [12]. Since the ratio between surface and volume in one-dimensional systems becomes important with respect to the bulk crystal, their transport properties might be governed by the surface structure and chemistry of their sidewalls [13,14]. Therefore, extensive studies of their conductivity with precise control over the nanowire surface structure and its environment are required to determine the contribution of the surface to the electronic transport.…”