Observation of Raman emission in silicon waveguides at 154 µm

Claps, R.; Dimitropoulos, D.; Han, Yan; Jalali, Bahram

doi:10.1364/oe.10.001305

Cited by 167 publications

(131 citation statements)

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“…Here, n 2 is the nonlinear refractive index, λ and ω are the wavelength and angular frequency of light, respectively, and c is the speed of light in vacuum. From the early 2000s, pioneered by B. Jalali's group at UCLA, both Raman-based [98][99][100][101][102][103] and Kerr-based [104,105] nonlinear effects have been explored in silicon photonics. Numerous studies have been published in the area of nonlinear silicon photonics by several groups, reviews of which can be found elsewhere [13,106].…”

Section: Third-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

Emerging heterogeneous integrated photonic platforms on silicon

Fathpour

2015

Nanophotonics

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Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature). More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the freecarrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III-V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for different purposes with the common feature of integrating them on a single substrate, most notably silicon.

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Section: Third-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

Emerging heterogeneous integrated photonic platforms on silicon

Fathpour

2015

Nanophotonics

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“…The Raman linewidth becomes broader when a broadband pump is used. These experiments has the merit to prove that silicon has a relatively strong Raman scattering efficiency (four orders of magnitude higher than that for silica) (Agrawal, 1995;Claps et al, 2002;.…”

Section: Basis On Stimulated Raman Scattering and Raman Amplifiermentioning

confidence: 99%

Stimulated Raman Scattering in Quantum Dots and Nanocomposite Silicon Based Materials

V.A.¹,

Rendina²,

Sirleto³

2012

Nonlinear Optics

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“…The loss is clearly dependent on technology, but typical values between 1-2 dB/cm/n g have been reported, 14 while reported values for the Raman gain vary over a wide range (4.3-76 cm/GW). [17][18][19] Note that we have chosen a realistically achievable value for κ (Ref. 14) and a conservative value for g R .…”

Section: Simplified Model: the Difference Between S S And S Pmentioning

confidence: 99%

Scaling of Raman amplification in realistic slow-light photonic crystal waveguides

et al. 2011

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The prospect for low pump-power Raman amplification in silicon waveguides has recently been boosted by theoretical studies discussing the enhancement of nonlinear phenomena in slow-light structures. In principle, the slowing down of either the pump or the signal beam is equivalent in terms of Raman gain, but in the presence of losses, we show that they play different roles in determining the net signal gain. We also investigate the impact of the mode profile in realistic slow-light waveguides on the total gain, an effect that is usually neglected in the context of stimulated Raman scattering. By taking representative losses and mode shapes into account, we provide a realistic estimation of the achievable performance of slow-light photonic crystal waveguides.

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Observation of Raman emission in silicon waveguides at 154 µm

Cited by 167 publications

References 0 publications

Emerging heterogeneous integrated photonic platforms on silicon

Emerging heterogeneous integrated photonic platforms on silicon

Stimulated Raman Scattering in Quantum Dots and Nanocomposite Silicon Based Materials

Scaling of Raman amplification in realistic slow-light photonic crystal waveguides

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