Observation of planar oscillations of MeV protons in silicon using ion channeling patterns

Breese, M.B.H.; King, Philip; Grime, G.W.; Smulders, P.J.M.; Seiberling, L. E.; Boshart, M.A.

doi:10.1103/physrevb.53.8267

Cited by 25 publications

(12 citation statements)

References 32 publications

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“…Barrett [6,7] in simulations. Later they were observed in several experiments [8][9][10][11][12][13][14] with ion beams of the energy of the order of MeV and well described in [15,16].…”

Section: Introductionmentioning

confidence: 90%

“…C. Quasichanneling oscillations Planar channeling oscillations in backscattering experiments at low energy were observed [8][9][10][11][12][13][14] while they have not been observed yet at higher energy. However, there is another kind of oscillations, which we predict in this paper that has not still observed under neither regimes.…”

Section: B Channeling Oscillationsmentioning

confidence: 99%

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Planar channeling and quasichanneling oscillations in a bent crystal

et al. 2016

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Particles passing through a crystal under planar channeling experience transverse oscillations in their motion. As channeled particles approach the atomic planes of a crystal, they are likely to be dechanneled. This effect was used in ion-beam analysis with MeV energy. We studied this effect in a bent crystal for positive and negative particles within a wide range of energies in sight of application of such crystals at accelerators. We found the conditions for the appearance or not of channeling oscillations. Indeed a new kind of oscillations, strictly related to the motion of over-barrier particles, i.e. quasichanneling particles, has been predicted. Such oscillations, named planar quasichanneling oscillations, possess a different nature than channeling oscillations. Through computer simulation, we studied this effect and provided a theoretical interpretation for them. We show that channeling oscillations can be observed only for positive particles while quasichanneling oscillations can exist for particles with either sign. The conditions for experimental observation of channeling and quasichanneling oscillations at existing accelerators with available crystal has been found and optimized. * Electronic address: alex˙sytov@mail.ru

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“…Barrett [6,7] in simulations. Later they were observed in several experiments [8][9][10][11][12][13][14] with ion beams of the energy of the order of MeV and well described in [15,16].…”

Section: Introductionmentioning

confidence: 90%

Section: B Channeling Oscillationsmentioning

confidence: 99%

Planar channeling and quasichanneling oscillations in a bent crystal

et al. 2016

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“…6 and 20, and the experimental procedures involved in the use of a nuclear microprobe to produce ''selected area'' and ''convergent beam'' channeling patterns are described in Ref. 21. It suffices to say here that a nuclear microprobe uses a series of magnetic quadrupole lenses to focus a MeV light ion beam to a point on the sample surface, as shown in Fig.…”

Section: Experimental Simulation Of Ion-channeling Patterns Throumentioning

confidence: 99%

Characterization of strain in crystal bilayers using ion-channeling patterns

1996

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This paper describes the experimental and theoretical simulation, the observation and the quantification of strain present in crystal bilayers using ion-channeling patterns produced by a focused 3 MeV proton beam. The dechanneling effects of strain are first experimentally simulated using different rotation angles between two individual, 0.3-m-thick, ͓100͔ silicon crystals. The patterns produced when both crystals are aligned close to the ͓100͔ axis, with a small rotation angle at the interface, are considered in detail using Monte Carlo computer simulations. Previously unobserved effects occurring in channeling patterns are discussed and general conditions under which different behavior is observed are described. Channeling patterns recorded through a thinned Si 0.85 Ge 0.15 /Si crystal bilayer are then used to characterize the interface rotation angle along several off-normal axes.

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“…The motion of a positive ion confined under a planar channeling regime is characterized by oscillations between neighboring atomic planes [see Fig. 1(a)] [2,3], whose wavelength is a function of particle energy. Such oscillatory motion strongly reduces the probability of impact of the channeled particles with the crystal atoms, thus allowing deep penetration into the crystal.…”

mentioning

confidence: 99%

“…Channeled particles (in black) oscillate between atomic planes with wavelength of about of 200 nm according to Ref. [3]. Trajectories in red pertain to the particles that are found in over-barrier states at the entry face of the crystal.…”

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confidence: 99%

Deflection of MeV Protons by an Unbent Half-Wavelength Silicon Crystal

et al. 2012

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The interaction of a 2 MeV proton beam with an ultrathin unbent Si crystal was studied through simulation and experiment. Crystal thickness along the beam was set at 92 nm, i.e., at half the oscillation wavelength of the protons in the crystal under planar channeling condition. As the nominal beam direction is inclined by less than the critical angle for planar channeling with respect to the crystal planes, under-barrier particles undergo half an oscillation and exit the crystal with the reversal of the transverse momenta; i.e., the protons are "mirrored" by the crystal planes. Over-barrier particles suffer deflection, too, to a direction opposite that of mirroring with a dynamics similar to that of volume reflection in a bent crystal. On the strength of such coherent interactions, charged particle beams can be efficiently steered through an ultrathin unbent crystal by the same physical processes as for thicker bent crystals.

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Observation of planar oscillations of MeV protons in silicon using ion channeling patterns

Cited by 25 publications

References 32 publications

Planar channeling and quasichanneling oscillations in a bent crystal

Planar channeling and quasichanneling oscillations in a bent crystal

Characterization of strain in crystal bilayers using ion-channeling patterns

Deflection of MeV Protons by an Unbent Half-Wavelength Silicon Crystal

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