Observation of piezoelectric effects in strained resonant tunneling structures grown on (111)B GaAs

Campbell, I. H.; Joswick, M. D.; Smith, D. L.; Miles, R. H.

doi:10.1063/1.113821

Cited by 13 publications

(7 citation statements)

References 5 publications

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“…Its current-voltage characteristic is not symmetric even under zero external stress. 3 The peak current is strongly dependent on the effective mass in the z direction m z * , and to a lesser extent in the transverse effective mass m t * . Our calculations ͑using the effective two-band k-P model described above͒ show that the effective masses change under uniaxial stress, as summarized in Table I for GaAs.…”

Section: Model Resultsmentioning

confidence: 98%

“…1,2 Another clear instance of piezoelectric effects on current-voltage characteristics has been demonstrated for pseudomorphic resonant tunneling structures grown on ͑111͒-oriented substrates. 3,4 Additional relevant work was done on the dependence of tunneling currents in ͑001͒-oriented III-V double barrier heterostructures on longitudinal and hydrostatic external stresses. 5 The calculations described in this article examine the consequences of both external and built-in stress on the current versus voltage characteristics of double-barrier resonant tunneling devices associated with piezoelectric and bandstructure effects.…”

Section: Introductionmentioning

confidence: 99%

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Resonant tunneling in (001)- and (111)-oriented III–V double-barrier heterostructures under transverse and longitudinal stresses

Albrecht

Liang

Ruden

et al. 1996

Journal of Applied Physics

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Calculations of the effects of external stress on the current-voltage characteristics of double-barrier ͑001͒and ͑111͒-oriented resonant tunneling devices are presented. Crystal strains arising from the application of external pressure and, in pseudomorphic structures, lattice mismatch cause shifts in the conduction and valence bands of the well and barrier layers with respect to the unstrained alignment. For certain stress orientations piezoelectric effects give rise to internal electric fields parallel to the current direction. The combined piezoelectric and band-structure effects modulate the transmission resonances which control the shape of the current versus voltage characteristics of the structures.

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Section: Model Resultsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Resonant tunneling in (001)- and (111)-oriented III–V double-barrier heterostructures under transverse and longitudinal stresses

Albrecht

Liang

Ruden

et al. 1996

Journal of Applied Physics

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“…The polarization charge density induced by the strain at the high index interfaces modifies the energy band structure and renormalizes the exciton levels by shifting the resonance to lower energy through the quantum confined Stark effect [2][3][4]. Strained InGaAs based quantum wells (QWs) and quantum wires (QWRs) thus become quite interesting for the design of new structures exploiting the tailored strength and orientation of the piezoelectric field [5]. These structures have improved electronic characteristics such as high mobility, and enhanced optical nonlinearity induced by the screening of the internal piezoelectric field by the external perturbations (either electric or electromagnetic fields [6][7][8][9][10]).…”

Section: Introductionmentioning

confidence: 99%

Current Development Status and Future Challenges of Ferroelectric Random Access Memory Technologies

Lee

Kim

2006

jjap

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InGaAs/GaAs V-shaped quantum wires grown in grooves with either (111) or (411) sidewalls have been studied by ps-transient photoluminescence as a function of the excitation intensity. The optical nonlinearity associated with the screening of the internal piezoelectric field is temporally monitored by the blue-shift of the spectrally resolved photoluminescence, occurring in the first 150 ps after the laser pulse, followed by the recovery of the unperturbed energy resonance at longer delays. Such an energy shift strongly depends on the photoexcited carrier density and reaches a maximum value of about 14 meV in the (411) wires. Despite their larger piezoelectric field, we observe a smaller energy shift in wires with (111) sidewalls, due to the enhanced confinement which localizes the wire wave-function at the bottom of the groove. The observed energy shifts are consistent with the theoretical calculation of the polarization charge density induced by the strain via the piezoelectric effect.

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“…This effect has been demonstrated in pseudomorphic structures grown on ͑111͒ substrates. 1 Strained ͑111͒ layers give rise to large built-in vertical-to-plane piezoelectric fields, which can be used in electro-optic devices. 2 An enhanced optical transition and low-threshold quantum-well laser from a quantum well grown along ͑111͒ have been obtained.…”

Section: Introductionmentioning

confidence: 99%

Piezoelectric effect in (001)- and (111)-oriented double-barrier resonant tunneling devices

Liang

Albrecht

Nathan

et al. 1996

Journal of Applied Physics

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We show experimentally that current-voltage characteristics of double-barrier resonant tunneling devices ͑DBRTDs͒ can be modified by internal polarization fields due to the piezoelectric effect induced by external uniaxial stresses. Electric polarization fields, perpendicular to the interfaces, arise in DBRTDs grown on ͑001͒-oriented substrates under uniaxial, compressive stresses parallel to the ͑110͒ or ͑110͒ crystal orientations, and in DBRTDs grown on ͑111͒B-oriented substrates under stress parallel to ͑111͒ crystal orientation. The voltages at which the resonant tunneling current peaks occur ͑peak voltages͒ are sensitive to the polarization fields induced by external stresses. The peak voltages can shift to more positive voltages or more negative voltages depending on the directions of applied stresses. We measured current-voltage characteristics of AlAs/GaAs/ AlAs double-barrier resonant tunneling structures as a function of external stresses at 77 K. Uniaxial stress was applied parallel to the ͑110͒ and the ͑110͒ crystal orientations for ͑001͒-oriented DBRTDs, as well as to the ͑111͒ orientation for ͑111͒B-oriented DBRTDs. With the substrates grounded in all the measurements, we found that the peak voltages shift to more positive voltages for ͑001͒-oriented DBRTDs under stress along the ͑110͒ orientation and for ͑111͒-oriented DBRTDs under the stress along ͑111͒ orientation, and to more negative voltages for ͑001͒-oriented devices under stress along the ͑110͒ orientation. The results are in agreement with our calculations published in the preceding article, which take into account the piezoelectric effect and band alignment under stress.

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Observation of piezoelectric effects in strained resonant tunneling structures grown on (111)B GaAs

Abstract: Evidence of quantum lateral confinement in sidegated resonant tunnelling diodes formed by patterned substrate regrowth Appl.

Cited by 13 publications

References 5 publications

Resonant tunneling in (001)- and (111)-oriented III–V double-barrier heterostructures under transverse and longitudinal stresses

Resonant tunneling in (001)- and (111)-oriented III–V double-barrier heterostructures under transverse and longitudinal stresses

Current Development Status and Future Challenges of Ferroelectric Random Access Memory Technologies

Piezoelectric effect in (001)- and (111)-oriented double-barrier resonant tunneling devices

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