Observation of Photodielectric Effect in Aluminum Nitride Piezoelectric Films
Huiqian Yang,
Jing Sun,
Zaheen Uddin
et al.
Abstract:Piezoelectric semiconductors hold great promise for the development of optoelectronic devices due to the presence of a photodielectric effect (PDE), which has been observed in perovskite ferroelectric ceramics. However, the PDE in wurtzitestructured aluminum nitride (AlN) and how light affects dielectric properties remain unexplored. Here, we observed PDE of AlN films in the low-frequency region around 20 Hz to 1 MHz. The permittivity (ε r ) increased after light irradiation, and the change in ε r increased wi… Show more
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