Observation of phase conjugation at 10.6 μm via intersubband third-order nonlinearities in a GaAs/AlGaAs multi-quantum-well structure

Abstract

We describe the observation of phase conjugation at 10.6 μm in a GaAs/AlGaAs multi-quantum-well-doped structure. The responsible nonlinear susceptibility χ(3) is due to a nearly resonant intersubband transition. The magnitude of χ(3) is 7×10−5 esu and the phase conjugate reflectivity is a few tenths of a percent.

Electric field effect on the linear and nonlinear intersubband refractive index changes in asymmetrical semiparabolic and symmetrical parabolic quantum wells

“…In fact, the solid line, the dashed line and the dotted line denote the linear RIC, the third order nonlinear RIC and the total RIC, respectively. The largest RIC is not at the line center but has a shift from the center [17], which is obviously different from the harmonics generation properties in QW systems [5][6][7][8][9][10]. (The maximum of the harmonic generations, such as the second-harmonic generations [5][6][7][8] or third-harmonic generations [9,10], usually occur at the resonant frequency points.)…”

“…These nonlinear optical properties, such as electro-optic effect [3][4][5], harmonic generation [1,2,[5][6][7][8][9][10][11], optical absorption effect [12][13][14][15][16][17] and refractive index changes [3,[15][16][17][18] (RICs), have the potential for device applications in far-infrared laser amplifiers [19], photo-detectors [20], and high-speed electro-optical modulators [21]. Therefore, from both the viewpoints of foundation and the application, the nonlinear optical properties of semiconductor QWs have attracted much attention in recent years [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. After understanding sufficiently the essence of the optical nonlinearity, in order to obtain a significant nonlinear optical effect, much attention is focusing on finding the most suitable nonlinear optical material and the most optimized quantum confined sys...…”

Third‐harmonic generation in a quantum well with adjustable asymmetry under an electric field

“…χ reported in the experiments [8][9][10][11]19]. But the interesting point is that the peak positions are blue-shifted for 1 2 κ = .…”

“…observed a large third-order optical nonlinearity due to intersubband transitions in GaAs AlGaAs / superlattices. Gravé [9] and coworkers obtained huge values of 3 3ω χ in an experiment on GaAs AlGaAs / multiple quantum wells. Sirtori et al [10] recorded a third-order susceptibility related with third-harmonic generation in a AlInAs GaInAs / heterostructure system about five orders of magnitude greater than in bulk GaAs.…”

Intensity-dependent nonlinear optical properties in a modulation-doped single quantum well

“…This suggests that ISB optical transitions in a QW may have very large optical nonlinearities. These nonlinear optical properties, such as electro-optic effect [10][11][12], harmonic generation [12][13][14][15][16][17][18][19][20], optical absorption effect [21][22][23][24][25][26] and refractive index changes [10,[24][25][26][27], have the potential for device applications.…”