Observation of optical gain in ultra-thin silicon resonant cavity light-emitting diode

Saito, Shinichi; Sakuma, Noriyuki; Suwa, Yuji; Arimoto, Hideo; Hisamoto, D.; Uchiyama, Hiroyuki; Yamamoto, Jiro; Sakamizu, Toshio; Mine, T.; Kimura, S.; Sugawara, Toshiki; Aoki, Masaki; Onai, T.

doi:10.1109/iedm.2008.4796727

Cited by 14 publications

(37 citation statements)

References 5 publications

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“…Thus, the E G increase with increasing Y for Y < 0.02 is attributable to the ε Trelaxation-induced E G expansion described by Eqs. 3and (4). Consequently, even small Y (< 0.02) can affect E G of 2D-Si 1−Y C Y .…”

Section: Physical Mechanism For Bandgap Modulation In 2d-si 1%y C Ymentioning

confidence: 99%

C-atom-induced bandgap modulation in two-dimensional (100) silicon carbon alloys

Mizuno

Nagamine

Omata

et al. 2016

Jpn. J. Appl. Phys.

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We experimentally studied the effects of the C atom on bandgap E G modulation in two-dimensional (2D) silicon carbon alloys, Si 1%Y C Y , fabricated by hot C + ion implantation into the (100) SOI substrate in a wide range of Y (4 ' 10 %5 : Y : 0.13), in comparison with the characteristics of 3D silicon carbide (SiC). X-ray photoelectron spectroscopy (XPS) and UV-Raman analysis confirm the Si-C, CC , and Si-Si bonds in the 2D-Si 1%Y C Y layer. The photoluminescence (PL) method shows that the E G and PL intensity I PL of 2D-Si 1%Y C Y drastically increase with increasing Y for high Y (;0.005), and thus we demonstrated a high E G of 2.5 eV and a visible wavelength λ PL less than 500 nm. Even for low Y (<10 %3), I PL of 2D-Si 1%Y C Y also increases with increasing Y, owing to the compressive strain of the 2D-Si 1%Y C Y layer caused by the C atoms, but the Y dependence of E G is very small. E G of 2D-Si 1%Y C Y can be controlled by changing Y. Thus, the 2D-Si 1%Y C Y technique is very promising for new E G engineering of future high-performance CMOS and Si photonics.

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Section: Physical Mechanism For Bandgap Modulation In 2d-si 1%y C Ymentioning

confidence: 99%

C-atom-induced bandgap modulation in two-dimensional (100) silicon carbon alloys

Mizuno

Nagamine

Omata

et al. 2016

Jpn. J. Appl. Phys.

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“…An Si-based WG cannot be used for emission from Si QW due to the absorption. An Si 3 N 4 WG was fabricated on top of the Si QW by conventional lithography and dry etching (Saito et al, 2008(Saito et al, , 2009. To enhance the optical confinement in the WG of the Si Resonant Cavity LED (RCLED), part of the supporting substrate was removed by using double sided aligner and anisotropic wet etching (Saito et al, 2008(Saito et al, , 2009, as shown in Figure 3B.…”

Section: Electro-luminescence From Silicon Quantum-wellmentioning

confidence: 99%

Group IV Light Sources to Enable the Convergence of Photonics and Electronics

et al. 2014

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Group IV lasers are expected to revolutionize chip-to-chip optical communications in terms of cost, scalability, yield, and compatibility to the existing infrastructure of silicon industries for mass production. Here, we review the current state-of-the-art developments of silicon and germanium light sources toward monolithic integration. Quantum confinement of electrons and holes in nanostructures has been the primary route for light emission from silicon, and we can use advanced silicon technologies using top-down patterning processes to fabricate these nanostructures, including fin-type vertical multiple-quantum-wells. Moreover, the electromagnetic environment can also be manipulated in a photonic crystal nanocavity to enhance the efficiency of light extraction and emission by the Purcell effect. Germanium is also widely investigated as an active material in Group IV photonics, and novel epitaxial growth technologies are being developed to make a high quality germanium layer on a silicon substrate. To develop a practical germanium laser, various technologies are employed for tensile-stress engineering and high electron doping to compensate the indirect valleys in the conduction band. These challenges are aiming to contribute toward the convergence of electronics and photonics on a silicon chip.

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“…Many approaches have been employed to improve the luminescence of silicon, such as silicon nanocrystals that exhibit electroluminescence [2] and optically pumped gain [3] in the visible and near-infrared wavelength ranges. Stimulated emission has been observed from silicon quantum wells [4] and the incorporation of rare earth dopants has enabled optically pumped transparency, e.g. from erbium doped silicon nitride nanocavities [5].…”

Section: Introductionmentioning

confidence: 99%

Room temperature all‐silicon photonic crystal nanocavity light emitting diode at sub‐bandgap wavelengths

Shakoor

Savio

Cardile

et al. 2012

Laser & Photonics Reviews

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Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300-1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enhance the electrically driven emission in a device via Purcell effect. A narrow (∆λ = 0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4 mW/cm 2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications.

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Observation of optical gain in ultra-thin silicon resonant cavity light-emitting diode

Cited by 14 publications

References 5 publications

C-atom-induced bandgap modulation in two-dimensional (100) silicon carbon alloys

C-atom-induced bandgap modulation in two-dimensional (100) silicon carbon alloys

Group IV Light Sources to Enable the Convergence of Photonics and Electronics

Room temperature all‐silicon photonic crystal nanocavity light emitting diode at sub‐bandgap wavelengths

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