Observation of negative differential transconductance in tunneling emitter bipolar transistors

Veenhuizen, Marc J. van; Locatelli, Nicolas; Moodera, Jagadeesh S.; Chang, J. J.

doi:10.1063/1.3205104

Applied Physics Letters

2009

DOI: 10.1063/1.3205104

|View full text |Cite

Observation of negative differential transconductance in tunneling emitter bipolar transistors

Marc J. van Veenhuizen

Nicolas Locatelli

Jagadeesh S. Moodera

et al.

Abstract: Articles you may be interested inNegative differential transconductance in silicon quantum well metal-oxide-semiconductor field effect/bipolar hybrid transistors Measurements and comparison of low frequency noise in npn and pnp polysilicon emitter bipolar junction transistors

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2011

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 12 publications

(8 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

Theory of giant Faraday rotation and Goos-Hänchen shift in graphene

Martı́nez¹,

Jalil²

2011

EPL

View full text Add to dashboard Cite

We give a quantum formulation of the recently observed giant Faraday rotation (FR) in monolayer graphene (Crassee I., Nat. Phys., 7 (2011) 48) which incorporates graphene's anomalous Hall effect and the resonant interplay between Landau levels and Floquet sidebands in the limit of large Fermi energy. The same formalism is then used to discuss the Goos-Hänchen (GH) shift at the interface of two media of different permittivity, with graphene at their interface. This last feature introduces current into the electromagnetic boundary conditions. For the s-polarization case, the presence of the graphene-induced surface charge causes a much larger GH shift than without charge, and its usual monotonic behavior is altered. In the p-polarization case, surface charge and current may alter the conventional GH shift in opposite ways. We predict new phenomena such as minimum GH shift and a lateral broadening of the reflected beam, all of which should be observable with current experimental capabilities.

show abstract

Theory of giant Faraday rotation and Goos-Hänchen shift in graphene

Martı́nez¹,

Jalil²

2011

EPL

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Observation of negative differential transconductance in tunneling emitter bipolar transistors

Abstract: Articles you may be interested inNegative differential transconductance in silicon quantum well metal-oxide-semiconductor field effect/bipolar hybrid transistors Measurements and comparison of low frequency noise in npn and pnp polysilicon emitter bipolar junction transistors

Cited by 1 publication

References 12 publications

Theory of giant Faraday rotation and Goos-Hänchen shift in graphene

Theory of giant Faraday rotation and Goos-Hänchen shift in graphene

Contact Info

Product

Resources

About