Observation of low-temperature annealing of a primary defect in gallium nitride

Schmidt, Matthias; Rensburg, P.J. Janse van; Meyer, Hannes de; Meyer, W.E.; Auret, F.D.

doi:10.1016/j.physb.2013.11.008

Cited by 2 publications

(2 citation statements)

References 15 publications

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“…It is worthwhile to note that wavelength and light intensity uniformities are strongly dependent on the crystal defects generated during the growth. The general defects of GaN include point defects , dislocation , impurities and native imperfections . High‐pressure techniques in experimental studies of GaN defects show that a deep mid‐gap localized state, involved in the mechanism of the parasitic luminescence, introduces an efficient radiative recombination channel that can compete with the band‐edge luminescence .…”

Section: Introductionmentioning

confidence: 99%

Uniformity investigation of MOCVD‐grown LED layers

Jiang

Yan

Liu

et al. 2015

Crystal Research and Technology

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Doped or undoped gallium nitride compounds (GaN/InGaN), usually grown by metal‐organic chemical vapor deposition (MOCVD) method, are at the heart of blue and green light emitting diodes (LEDs). Growth uniformities, such as the excited wavelength, luminous intensity and film thickness, critically influence their application in LED devices. In this paper, growth of GaN compounds in a MOCVD reactor, capable of a one‐time production of 36 × 2” wafers of nitrides, has been investigated. To examine growth uniformity across the wafer and from wafer to wafer, the reactor is divided into Zone A, Zone B and Zone C according to distance to the center of the graphite susceptor. Comparative analysis of each zone offers a straightforward view of the mean excitation wavelength, luminous intensity, film thickness and their standard deviations. Conformity of the growth uniformity in each zone is further checked comprehensively through averaging across‐wafer and wafer‐to‐wafer variables and their standard deviations. Zone B is found to retain excellent wavelength uniformity, since it is located at the middle of the susceptor with weaker effects of the susceptor edge and of the inlet gas flow. Zone A, at the center of the reactor, has the best mean intensity and thickness uniformities due to a well control of the infrared temperature measurement during the growth. And Zone C is worst in all uniformities and should be the main focus when optimizing the reactor. The above experimental analysis reveals the principles common to the MOCVD technique, and provides a basic for further optimization of the process window to improve the cycles with considerable reduction of the costs.

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Section: Introductionmentioning

confidence: 99%

Uniformity investigation of MOCVD‐grown LED layers

Jiang

Yan

Liu

et al. 2015

Crystal Research and Technology

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“…In this light we investigated (primary) lattice defects in GaN thin films that were introduced by proton-bombardment at 20 K. We recently built a setup for this purpose [22] in which the proton-bombardment as well as optical space charge spectroscopy can be conducted and thus introduction and annealing of lattice defects can be investigated in situ.…”

Section: Introductionmentioning

confidence: 99%

Introduction and annealing of primary defects in proton‐bombarded n‐GaN

Schmidt

Meyer

Rensburg

et al. 2013

Physica Status Solidi (b)

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We report on in situ space charge spectroscopy measurements on low‐temperature 1.6thinmathspaceMeV proton‐bombarded n‐type gallium nitride thin film samples. The scope of this study was to investigate the introduction and annealing dynamics of radiation‐induced lattice damage. Using optical excitation allowed for the detection of electronic defect states in the entire GaN bandgap and to detect unstable primary defects that would have been invisible in thermal space charge spectroscopic measurements. The introduction of compensating acceptor‐like primary defects by the bombardment was observed and manifested as a decrease in the sample capacitance. After the bombardment the concentrations of deep‐levels and acceptor states were monitored by deep‐level transient spectroscopy and photo‐capacitance measurements while the temperature was increased. It was found that annealing and reactions of primary bombardment‐induced defects occurs even below room‐temperature which might account for the radiation‐hardness of GaN.

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Observation of low-temperature annealing of a primary defect in gallium nitride

Cited by 2 publications

References 15 publications

Uniformity investigation of MOCVD‐grown LED layers

Uniformity investigation of MOCVD‐grown LED layers

Introduction and annealing of primary defects in proton‐bombarded n‐GaN

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