Observation of laser ablation of silicon as a function of pulse length at constant fluence via time-resolved x-ray spectroscopy

Abstract

We investigate the ablation of silicon as a function of laser pulse length at a constant fluence using time-resolved x-ray spectroscopy data obtained from OMEGA EP experiments at the University of Rochester's Laboratory for Laser Energetics. Our targets consisted of three-layer planar structures composed of Si (50 μm), Cu (25 μm), and SiO2 (500 μm) layers. The Si layer was irradiated by a 351-nm laser with varying pulse widths of 250 ps, 500 ps, 1 ns, and 10 ns while maintaining a constant fluence of ∼27.9 kJ/cm2. Electron temperatures and densities of the ablated plasma were determined by analyzing the time-resolved x-ray spectroscopy data through a comparison of experimental measurements with synthetic results obtained from Si atomic calculations in a steady state and non-local thermodynamic equilibrium. These calculations were computed using PrismSPECT [MacFarlane et al., High Energy Density Phys. 3, 181 (2007)]. Additionally, radiation-hydrodynamics simulations with FLASH are used to generate simulated plasma-density and plasma-temperature profiles, which are then compared with the experimental measurements. Our analyses reveal that increasing the laser pulse length at a constant fluence results in a decrease in electron temperatures and densities. Furthermore, the longer pulses with lower intensities lead to deeper ablation regions before reaching the peak ablation but lower ionization balances in the silicon layer. These findings emphasize the critical role of laser pulse length in plasma ablation and shock generation for laser-impulse studies.

Laser material interaction of undoped and doped silicon

“…Nevertheless, there remains a notable gap in the exploration of single pulse damage, particularly when considering different doping concentrations over a range of intensities. Research done by Leyder et al investigated silicon damage induced by single 1.3 µm femtosecond pulses amidst varying free carrier densities 5 . Recent endeavors such as an Omega EP experiment delve into creating high pressure on silicon from plasma generation at intensities exceeding 10 14 W/cm 2 .…”