The
ZnO-based heterostructures are predicted to be promising candidates
for optoelectronic devices in the infrared and terahertz (THz) spectral
domains owing to their intrinsic material properties. Specifically,
the large ZnO LO-phonon energy reduces the thermally activated LO-phonon
scattering, which is predicted to greatly improve the temperature
performance of THz quantum cascade lasers. However, to date, no experimental
observation of intersubband emission from ZnO optoelectronic devices
has been reported. Here, we report the observation of THz intersubband
electroluminescence from ZnO/Mg
x
Zn1–x
O quantum cascade structures grown
on a nonpolar m-plane ZnO substrate up to room temperature. The electroluminescence
peak shows a line width of ∼20 meV at a center frequency of
∼8.5 THz at 110 K, which is not accessible for GaAs-based quantum
cascade structures because of the reststrahlen band absorption from
8 to 9 THz. This result is an important step toward the realization
of ZnO-based THz quantum cascade lasers.