Observation of Internal Transitions of Confined Excitons in GaAs/AlGaAs Quantum Wells

Salib, M. S.; Nickel, H.; Herold, G.; Petrou, A.; McCombe, B. D.; Chen, R.; Bajaj, K. K.; Schaff, William J.

doi:10.1103/physrevlett.77.1135

Cited by 67 publications

(69 citation statements)

References 21 publications

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“…With increasing n e the number of trions increases, as is expected and which is experimentally observed. 28,29,35 For n e ϭ2ϫ10 10 cm…”

Section: Resultsmentioning

confidence: 99%

“…For the measurements in the magnetic field we used a setup which allowed us to perform PL and ODR measurements simultaneously. 35,36 The sample was placed in the Faraday geometry in a cryostat at a temperature Tϭ1.4 K inside a Bitter magnet, which can produce dc fields up to 17 T. To perform polarized measurements a /4 plate and a polarizer were mounted directly above the sample in the cryostat before the luminescence entered the fiber. The FIR radiation was produced by a methanol-gas-based FIR laser system, which was pumped by a 40-W cw CO 2 laser.…”

Section: Methodsmentioning

confidence: 99%

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Dynamical equilibrium between excitons and trions in CdTe quantum wells in high magnetic fields

et al. 2002

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The formation of two-dimensional negatively charged excitons ͑negative trions͒ out of excitons and free electrons is found to be determined by a dynamical equilibrium. This dynamical equilibrium consists of a chemical equilibrium, relating the trion, exciton, and electron populations, modified by finite formation and recombination times of ͑charged͒ excitons, as is evidenced by a magnetic-field-dependent photoluminescence ͑PL͒ and far-infrared study of doped CdTe/CdMgTe quantum wells. The data show that the trion formation is entirely driven by the occupation of the spin-split trion, exciton and electron levels. Incorporation of the proposed trion formation scheme into a rate equation model gives a proper description of the experimental data, leading to values of the formation, recombination, and spin-flip times of trions and excitons that are in good agreement with results of time-resolved experiments in the literature. The model elucidates the effect of the heavy-hole splitting on the polarization degree of the trion PL in a magnetic field and the influence of the dark excitons on the trion formation.

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“…With increasing n e the number of trions increases, as is expected and which is experimentally observed. 28,29,35 For n e ϭ2ϫ10 10 cm…”

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Dynamical equilibrium between excitons and trions in CdTe quantum wells in high magnetic fields

et al. 2002

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“…Several 1s-to np-like electric-dipole transitions have been recently observed [1][2][3][4][5] in GaAs-Ga 1-x Al x As quantum wells (QWs), where the three-dimensional hydrogenic notation at zero magnetic field was used. In particular, at large values of the magnetic field, the 1s → 2p -intraexcitonic transition is experimentally observed as arising from two different neutral heavy-hole magnetoexcitons as a consequence of different and large hole-spin splitting for the two optically active heavy-hole 1s (-1/2, -3/2) and 1s (+1/2, +3/2) magnetoexcitons, where nlm (M, M′) indicates an exciton nlm-like state associated with a M electron (with M = ±1/2) and a M′ hole (with M′ = ±1/2, ±3/2).…”

Section: Introductionmentioning

confidence: 99%

Exciton mixing and internal transitions of neutral magnetoexcitons in quantum wells

Duque

Barticevic

Pacheco

et al. 2004

Physica Status Solidi (b)

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We present a theoretical investigation, in the effective-mass approximation, of exciton mixing and 1s -2p ± internal transitions of neutral magnetoexcitons in GaAs-Ga 1-x Al x As quantum wells. Theoretical results are obtained by diagonalizing the Kohn-Luttinger Hamiltonian in the presence of an external magnetic field along the growth direction of the quantum well, with mixing of appropriate light-and heavyhole exciton states taken into account. We first perform the exciton calculations in the diagonal approximation, and take the exciton-envelope wave functions as linear combinations of products of hole and electron quantum-well states with Gaussian functions. Effects of exciton mixing are then calculated within perturbation theory. Theoretical results for the exciton internal transitions from 1s-like to 2p ± -like magnetoexciton states in GaAs-Ga 1-x Al x As quantum wells, with well widths of 80 Å, 100 Å, 125 Å, 150 Å and 200 Å, are found in overall agreement with optically detected resonance measurements.

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“…Optical-pump and THz-probe techniques [1] have been employed to investigate the ultrafast dynamics of plasma screening in an intrinsic semiconductor [2] and bound exciton formation in semiconductor quantum wells (QWs) [3][4][5]. It also has been demonstrated that intense cw-THz radiation gives rise to various nonlinear optical effects in semiconductors [6][7][8][9][10][11].…”

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confidence: 99%

Terahertz‐induced extreme nonlinear transients in semiconductor quantum wells

Lee

Danielson

Prineas

et al. 2009

Phys. Status Solidi (c)

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We demonstrate terahertz‐induced extreme nonlinear transients in GaAs/AlGaAs quantum‐wells via terahertz‐pump and optical‐probe experiments. The light‐hole and heavy‐hole excitonic resonances exhibit strong spectral modulations that fluctuate on a subpicosecond time scale as the pump‐probe time delay varies. Microscopic many‐body calculations reveal that the experimental observations contain pronounced signatures of ponderomotive contributions, the ac‐Stark effect, and terahertz high harmonic generations. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Observation of Internal Transitions of Confined Excitons in GaAs/AlGaAs Quantum Wells

Cited by 67 publications

References 21 publications

Dynamical equilibrium between excitons and trions in CdTe quantum wells in high magnetic fields

Dynamical equilibrium between excitons and trions in CdTe quantum wells in high magnetic fields

Exciton mixing and internal transitions of neutral magnetoexcitons in quantum wells

Terahertz‐induced extreme nonlinear transients in semiconductor quantum wells

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