We investigate the correction of interlayer exciton binding energy in transition metal dichalcogenides double layers arising from the exciton-optical phonon coupling using the method of Lee-Low-Pines unitary transformation. We find that the binding energy varies in several tens of meV, depending on the polarizability of materials and the interlayer distance between double layers. Moreover, the correction of binding energy results in a remarkable increase of the critical temperature for the condensation of dilute excitonic gas basing on the Berezinskii-Kosterlitz-Thouless model. These results not only enrich the knowledge for the modulation of interlayer excitons, but also provide potential insights for the Bose-Einstein condensation and superfluid transport of interlayer excitons in two-dimensional heterostructures.Structure of the double layer consisting of different monolayer transition metal dichalcogenides (TMDS), that is called as van der Waals heterostucture, [1,2] provides an excellent platform to study the interlayer exciton physics, [3,4] in which an electron and a hole reside in different monolayers, bounded by attractive Coulomb interaction as illustrated in Figure 1(a). Due to the spatial charge separation, the recombination lifetimes of interlayer excitons are in the range of nanoseconds, several orders of magnitude longer than intralayer excitons shown in Figure 1(b). [5][6][7] More important is that optical properties of interlayer excitons can be easily modulated by some external ways, [4,[6][7][8][9][10][11] such as the gate voltage, temperature, and power of optical excitation, which provides an ideal candidate for realization of many excitonic devices, [3,12,13] such as excitonic photon storage, excitonic transistor, and excitonic light emission dipole. On the other hand, based on excitons are the nature of Bosonic particles, the Bose-Einstein condensation and superfluid transport of the dilute exciton gas in these double layers were proposed extensively in both recent experiments [13,14] and theories. [15][16][17][18][19] Of key importance to this species of exciton is its large binding energy, which determines above mentioned potential applications.Amount of experiments [20][21][22][23] and theories [17][18][19][22][23][24] have focused on the binding energies of interlayer excitons in different TMDS double layers in recent years. Wilson et al. deduced that the binding energy of interlayer exciton is large than 200 meV in MoSe 2 -WSe 2 heterobilayers by using rational device design and submicrometer angle-resolved photoemission spectroscopy in combination with photoluminescence. [20] But Mouri et al. found that the exciton binding energy is only 90 meV in MoS 2 -WSe 2 heterobilayers, determining from its thermal dissociation behavior. [21] The striking discrepancies between them can be attributed to the differences of the interlayer distance and the effective mass of exciton as theories predicted. Recently, Latini et al. developed the quantum electrostatic heterostructure model to calculate t...