Observation of hot-electron energy loss through the emission of phonon-plasmon coupled modes in GaAs

Petersen, Chad; Lyon, S. A.

doi:10.1103/physrevlett.65.760

Cited by 51 publications

(15 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Here T is given by T(g,a;) = ri(g,o;)+r2(g,a;) ' (6) The contribution to the LO phonon self-energy XpiQiW) t° the lowest order in the anharmonic interac-/j\ tion, according to Fig. 1, can be shown to have the fol-I lowing form:…”

Section: Rlbi = Tt Yl F°° D" U R (?> ") [~I M D (And «>)Mmentioning

confidence: 99%

“…With strong electron-electron interaction, electrons equilibrate among themselves at the temperature TE before giving off energy to phonon systems. It is believed [1][2][3][4][5][6][7][8][9][10][11][12][13][14] that in semiconductors such as GaAs/GaAlAs, electrons lose energy mainly by emitting longitudinal optical (LO) phonons through the Prohlich interaction for TE > 50 K, and by acoustic phonons through the deformation potential interaction below TE < 15 K.The ELR for hot electrons was first calculated by Kogan [8] to describe the energy transfer from hot electrons to LO phonons by employing the second order perturbation theory. It was also studied by Lei and Ting [9] using the Green's function method for hot electrons under a strong electric field.…”

mentioning

confidence: 99%

“…We show that our result is able to account for the dramatic enhancement of the hot-electron ELR observed in GaAs/GaAlAs semiconductors at low temperatures. During recent years intensive experimental [1][2][3][4][5][6][7] and theoretical [8][9][10][11][12][13][14] efforts have been devoted to the understanding of the hot electron energy loss rate (ELR) in semiconductors. In the hot-electron energy loss experiments, electrons are heated by an external field.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Energy loss rate of hot electrons in a semiconductor: The role of anharmonic interactions

1993

View full text Add to dashboard Cite

The hot-electron energy loss rate (ELR) is studied by using the nonequilibrium Green's function approach. The effect due to the anharmonic interaction is considered. As a result, hot electrons lose their energy primarily by creating pairs of acoustic phonons via LO phonons. When acoustic phonons are kept at the lattice temperature, the nonequilibrium distribution for LO phonons is derived by imposing the steady state condition. We show that our result is able to account for the dramatic enhancement of the hot-electron ELR observed in GaAs/GaAlAs semiconductors at low temperatures.PACS numbers: 72.10. Di, 63.20.Hp, 63.20.Ls, 72.20.Ht During recent years intensive experimental [1-7] and theoretical [8][9][10][11][12][13][14] efforts have been devoted to the understanding of the hot electron energy loss rate (ELR) in semiconductors. In the hot-electron energy loss experiments, electrons are heated by an external field. With strong electron-electron interaction, electrons equilibrate among themselves at the temperature TE before giving off energy to phonon systems. It is believed [1][2][3][4][5][6][7][8][9][10][11][12][13][14] that in semiconductors such as GaAs/GaAlAs, electrons lose energy mainly by emitting longitudinal optical (LO) phonons through the Prohlich interaction for TE > 50 K, and by acoustic phonons through the deformation potential interaction below TE < 15 K.The ELR for hot electrons was first calculated by Kogan [8] to describe the energy transfer from hot electrons to LO phonons by employing the second order perturbation theory. It was also studied by Lei and Ting [9] using the Green's function method for hot electrons under a strong electric field. Kogan's formula was modified later by a number of authors [10] to account for the hot-optical-phonon effect by introducing a phenomenological finite energy transfer rate from LO phonons to acoustic phonons. It has been well known that these modified formulas are not able to explain the dramatic enhancement of the ELR observed in the experiment of Shah et al.[4] at low temperatures. In several subsequent publications, Das Sarma and co-workers [11] investigated this problem by simply renormalizing the optical phonon Green's function with electron-phonon interactions. The renormalized LO phonon spectrum consists of the low lying electron-hole-like and plasmonlike excitations. By assuming that these electron-hole-like and plasmonlike excitations are kept at the lattice temperature TL, they found that their ELR [11] exhibits orders of magnitude enhancement at low temperatures over that given by Kogan's formula. However, as Dharma-wardana [12] pointed out recently, the particle-hole-like and plasmonlike excitations exhibited in the LO phonon spectrum of Ref. [11] should be at the electron temperature TE instead of the lattice temperature TE,. When this correction has been taken care of, the enhancement of ELR at low temperatures disappears. Therefore, the underlying physical reason for the low-temperature enhancement of ELR [4] is still unsettled.In the ...

show abstract

Section: Rlbi = Tt Yl F°° D" U R (?> ") [~I M D (And «>)Mmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

See 1 more Smart Citation

Energy loss rate of hot electrons in a semiconductor: The role of anharmonic interactions

1993

View full text Add to dashboard Cite

show abstract

“…The LPP modes influence the energy exchange between carrier and the lattice, thus playing an important role in carrier relaxation and transport. [10][11][12][13][14] The relative energy shift and linewidth broadening of the LPP modes are directly influenced by the concentration and the mobility of free charge carriers. Both LPP modes ͑highfrequency and low-frequency LPP modes͒ can be observed if the damping of plasmon is sufficiently small.…”

Section: Introductionmentioning

confidence: 99%

Raman analysis of longitudinal optical phonon-plasmon coupled modes of aligned ZnO nanorods

Cheng

Tzeng²,

et al. 2009

Journal of Applied Physics

View full text Add to dashboard Cite

The electronic properties of vertically aligned ZnO nanorods have been investigated using micro-Raman spectroscopy. The concentration and mobility of the charge carriers were determined via Raman line shape analysis using longitudinal-optical-phonon-plasmon coupled mode. The local laser heating and the stress effects have been considered when analyzing the Raman spectra. The mobility and carrier concentration of the aligned ZnO nanorods are 84.8 cm 2 / V s and 3.8 ϫ 10 17 cm −3 , respectively. As a comparison, the mobility and carrier concentration of the undoped bulk ZnO were also obtained from the Raman line shape analysis. The mobility of the aligned ZnO nanorods is about 20% lower than that of the undoped bulk ZnO, which can be attributed to enhanced surface scattering due to the reduction in dimension.

show abstract

“…For the case of relaxation of hot electrons in passive (i.e. non-inverted) and n-doped bulk semiconductors this has been observed, for example, as phonon replicas in time resolved luminescence spectra [3].…”

Section: Introductionmentioning

confidence: 97%

The Interplay of Electron‐Phonon and Electron‐Electron Scattering within the Two‐Time Green's Function Description

Köhler¹,

Binder²

1997

Contrib. Plasma Phys.

View full text Add to dashboard Cite

We present nnmerical results for electron-phonon and electron-electron scattering in optically exated electron plasmas in bulk selpiconductors. Our results are based on the full two-time Green's function approach.They include quantum mechanical memory and correlation effects because the scattering integrals are generalizations of the conventional Boltimann scattering integrals. The interplay of two different scattering mechanisms is studied and compared to results where only one scattering mechanism is present.

show abstract

Observation of hot-electron energy loss through the emission of phonon-plasmon coupled modes in GaAs

Cited by 51 publications

References 24 publications

Energy loss rate of hot electrons in a semiconductor: The role of anharmonic interactions

Energy loss rate of hot electrons in a semiconductor: The role of anharmonic interactions

Raman analysis of longitudinal optical phonon-plasmon coupled modes of aligned ZnO nanorods

The Interplay of Electron‐Phonon and Electron‐Electron Scattering within the Two‐Time Green's Function Description

Contact Info

Product

Resources

About