2023
DOI: 10.1103/physrevb.107.085406
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Observation of highly anisotropic bulk dispersion and spin-polarized topological surface states in CoTe2

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Cited by 7 publications
(16 citation statements)
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“…CoTe 2 nanosheets are also a topological semimetal that supports type II Dirac crossovers near the Fermi energy. 28 This means that CoTe 2 nanosheets are similar to graphene, which gives it a high carrier mobility and a wide operating band. 12 This is a rare property and only a few TMDs (e.g., PdTe 2 , NiTe 2 ) have this property.…”
Section: Introductionmentioning
confidence: 99%
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“…CoTe 2 nanosheets are also a topological semimetal that supports type II Dirac crossovers near the Fermi energy. 28 This means that CoTe 2 nanosheets are similar to graphene, which gives it a high carrier mobility and a wide operating band. 12 This is a rare property and only a few TMDs (e.g., PdTe 2 , NiTe 2 ) have this property.…”
Section: Introductionmentioning
confidence: 99%
“…29,30 CoTe 2 nanosheets also host several topological band inversions, which means that it can produce stepped spinpolarized surface states over a wide energy range. 28 Because CoTe 2 nanosheets have metallic properties, it also has excellent thickness-adjustable conductivity and excellent breakdown current density. 31,32 CoTe 2 nanosheets have applications in a variety of fields.…”
Section: Introductionmentioning
confidence: 99%
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“…[10,11,12,13] Among various fantastic candidates, cobalt telluride (Co x Te y ) widely reputed as star catalysts for hydrogen/oxygen evolution reactions, [14,15] water splitting, [16] photo-/electro-catalytic chemistry, [17,18,19] and even energy storage devices, [20,21] was re-recognized with tunable ferromagnetism and paramagnetism and is potential for memory and spintronic devices. [22,23,24,25] Differentiating from traditional vdW magnets, the stoichiometric ratio of Co and Te varies from (1+𝛿):1 to 1:2 and the variation of crystal structure effectively modulates the band structure of Co x Te y from type-II Dirac semimetallic (1T-CoTe 2 ) to semiconducting (bandgap ≈2.5 eV, CoTe). [26,27,28] This extra degree of freedom enables Co x Te y taking centerstage for exploring spin fluctuation and other new physical paradigms.…”
Section: Introductionmentioning
confidence: 99%