Observation of high-frequency high-field instability in GaAs/InGaAs/AlGaAs DH-MODFETs at K band

Chen, Y.K.; Radulescu, D.C.; Wang, G.W.; Najjar, F.E.; Eastman, L.F.

doi:10.1109/55.20394

Cited by 25 publications

(4 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Unlike the TCM mentioned above, VCM has oxygen-related defects/vacancies and their electrochemical reaction occurred in the RS medium [42][43][44][45][46][47]. In addition, it is not necessary for an RRAM device to operate with the structure that consists of an active electrode and an inert electrode, namely, the activity difference between TE and BE is not required [48].…”

Section: Valance Change Mechanism (Vcm)mentioning

confidence: 99%

“…In addition, it is not necessary for an RRAM device to operate with the structure that consists of an active electrode and an inert electrode, namely, the activity difference between TE and BE is not required [48]. Chen et al researched the unipolar performance of Pt/SiO x /Pt RRAM device with VCM and dangling bond (DB) [43]. As illustrated in Figure 4, with the effect of external electric field, the strength of the polar covalent Si-O bond was weakened and finally broken.…”

Section: Valance Change Mechanism (Vcm)mentioning

confidence: 99%

“…Therefore, oxygen defects/vacancies and oxygen may be the dominating aspect during the growth and destruction of CF in the functional layer. In most cases, for VCM RRAM devices, the resistance change performance is attributed to the formation and rupture process of CF based on oxygen vacancies in the RS layer [42][43][44][45][46][47]. With the positive voltage bias applied onto the inert electrode, oxygen ions drift from where they stayed before with the effect of external electric field and oxygen vacancies left in the RS medium.…”

Section: Valance Change Mechanism (Vcm)mentioning

confidence: 99%

See 2 more Smart Citations

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

View full text Add to dashboard Cite

Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.

show abstract

Section: Valance Change Mechanism (Vcm)mentioning

confidence: 99%

Section: Valance Change Mechanism (Vcm)mentioning

confidence: 99%

Section: Valance Change Mechanism (Vcm)mentioning

confidence: 99%

See 1 more Smart Citation

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

View full text Add to dashboard Cite

show abstract

“…Devices exploiting the effect, such as charge injection transistors [43] and negative resistance field effect transistors [44], were reported shortly thereafter. RST has also been observed in HEMTs under forward gate bias and high drain voltage [45,46].…”

Section: Introductionmentioning

confidence: 94%

Theory of drain noise in high electron mobility transistors based on real-space transfer

Esho

Choi

Minnich

2022

Journal of Applied Physics

View full text Add to dashboard Cite

High electron mobility transistors are widely used as microwave amplifiers owing to their low microwave noise figure. Electronic noise in these devices is typically modeled by noise sources at the gate and drain. While consensus exists regarding the origin of the gate noise, that of drain noise is a topic of debate. Here, we report a theory of drain noise as a type of partition noise arising from real-space transfer of hot electrons from the channel to the barrier. The theory accounts for the magnitude and dependencies of the drain temperature and suggests strategies to realize devices with lower noise figure.

show abstract

Design, fabrication and characterization of In0.23Ga0.77As-channel planar Gunn diodes for millimeter wave applications

Khalid

Caldwell³

et al. 2011

Solid-State Electronics

View full text Add to dashboard Cite

Observation of high-frequency high-field instability in GaAs/InGaAs/AlGaAs DH-MODFETs at K band

Cited by 25 publications

References 11 publications

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Theory of drain noise in high electron mobility transistors based on real-space transfer

Design, fabrication and characterization of In0.23Ga0.77As-channel planar Gunn diodes for millimeter wave applications

Contact Info

Product

Resources

About