Silicon tetrafluoride (SiF 4 ) is a trace component of volcanic gases. However, a better knowledge of spectroscopic parameters is needed for this molecule in order to derive accurate concentrations. This motivated FTIR measurements with high-spectral resolution (0.001 cm −1 ) and an extensive study of its infrared absorption bands, including the fundamentals and overtone and combinations. We present here a detailed analysis and modeling of the strongly absorbing ν 3 and ν 4 fundamental bands, for the three isotopologues in natural abundance: 28 SiF 4 (92.23 %), 29 SiF 4 (4.67 %) and 30 SiF 4 (3.10 %). It includes a global fit with consistent parameter sets for the ground and excited states. In particular, all existing rotational line data have been included. The 2ν 4 band of 28 SiF 4 could also be analyzed in detail. A first fit of the dipole moment derivative for the ν 3 band for 28 SiF 4 has been performed, along with two independent estimates of the integrated band intensity; the results are consistent with literature values, around 690 km/mol. The isotopic dependence of band centers and Coriolis parameters has also been studied. TFSiCaSDa, a new database of cross sections and calculated lines for the ν 3 band of SiF 4 , has been set up.