1970
DOI: 10.1063/1.1659229
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Observation of Grain Boundaries with the Field-Ion Microscope

Abstract: The information which can be gained from field-ion micrographs showing grain boundaries is considered critically. An attempt is made to quantify the factors governing the ``ring'' configuration across both low-angle and high-angle grain boundaries. It is shown that spiral configurations can be generated in the absence of grain boundary dislocations. Some potential applications of the grain boundary contrast theory are indicated.

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Cited by 22 publications
(4 citation statements)
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“…Field ion microscopy (FIM), invented by Erwin Mu¨ller, [362] was the first technique to image individual atoms on the surface of a metal, [363] as well as crystalline defects such as vacancies [364] and voids, [365] dislocations, [366] and grain boundaries [367] in pure metals.…”
Section: Use Of Field Ion Microscopy For Studying Advanced High-stmentioning
confidence: 99%
“…Field ion microscopy (FIM), invented by Erwin Mu¨ller, [362] was the first technique to image individual atoms on the surface of a metal, [363] as well as crystalline defects such as vacancies [364] and voids, [365] dislocations, [366] and grain boundaries [367] in pure metals.…”
Section: Use Of Field Ion Microscopy For Studying Advanced High-stmentioning
confidence: 99%
“…Field-ion microscopy (FIM), an important technique developed since 1960s, has contributed significantly in characterizing GB structure with high resolution. [13][14][15][16][17] Nevertheless, according to Fortes and Smith, 18 atomic arrangement at a GB is difficult to deduce from FIM micrographs due to various limiting factors. So far, the structure of GBs is far from well understood.…”
Section: Introductionmentioning
confidence: 99%
“…Different methods such as decoration (Hedges andMitchell 1953, Amelinckx 1956), electron microscopy (Ball and Hirsch 1955), x ray topography (Lang and Miles 1965) and field-ion microscopy (Ranganathan 1966, Fortes andSmith 1970) have been used to study the fine structure of the grain boundaries and dislocation configurations inside the crystal. In this paper we show how etching can be used to study the substructure of the grain boundaries and dislocation networks.…”
Section: Introductionmentioning
confidence: 99%