Observation of femtosecond infrared luminescence in gold

Suemoto, Tohru; Yamanaka, Ken; Sugimoto, Noriaki

doi:10.1103/physrevb.100.125405

Cited by 12 publications

(16 citation statements)

References 30 publications

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“…In the case where a time constant of the carrier–carrier scattering is much shorter than the time resolution of experiments, the PL of thermal carriers is observed strongly compared to that of the nonthermal carriers even in the early time region. This feature of PL spectrum has been observed in MLG, gold, and InAs . The feature is also shown in Figure , where the PL superimposition of the nonthermal carriers is observed beyond 1.0 eV.…”

Section: Resultssupporting

confidence: 67%

“…In contrast, many electrons and holes remain in the original thermal distribution. Here, for convenience of discussion, the carrier distribution is divided into thermal and nonthermal parts. , The initial nonthermal distribution is formed by the small numbers of electrons and holes created by the laser pulse excitation, and the initial thermal distribution is similar to the original distribution at room temperature. Due to carrier–carrier scattering (and via carrier–phonon scattering), thermalization within the carrier system occurs.…”

Section: Resultsmentioning

confidence: 99%

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Photoluminescence Enhancement Exceeding 10-Fold from Graphene via an Additional Layer: Photoluminescence from Monolayer and Bilayer Graphene Epitaxially Grown on SiC

et al. 2021

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Graphene exhibits characteristic optical properties and has garnered significant attention for application in light-emitting devices. Bilayer graphene is expected to be more suitable than monolayer graphene for application because of its strong luminescence owing to weak substrate effects. To further investigate this, we analyze the femtosecond photoluminescence (PL) decay and time-resolved PL spectra of epitaxial monolayer and bilayer graphene on SiC. The bilayer graphene emits longer and more than 10-fold stronger PL compared with the monolayer graphene. The PL decay curves and spectra are analyzed using a three-temperature model. The time evolutions of the carrier temperature and coupling coefficients between the carriers of graphene and each of the phonons of graphene and the substrate are obtained. The carrier temperature in bilayer graphene after femtosecond laser pulse excitation is approximately 120 K higher than that in monolayer graphene under our experimental conditions, thereby explaining the longer and stronger PL from the bilayer graphene. This study demonstrates the superior ability of bilayer graphene as a light-emitting material compared with monolayer graphene and promotes research pertaining to graphene-based light-emitting devices.

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Section: Resultssupporting

confidence: 67%

Section: Resultsmentioning

confidence: 99%

Photoluminescence Enhancement Exceeding 10-Fold from Graphene via an Additional Layer: Photoluminescence from Monolayer and Bilayer Graphene Epitaxially Grown on SiC

et al. 2021

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“…While some of these arguments recurred also in the context of PL following illumination by ultrafast light pulses (to be denoted below as transient PL, tPL) (see, e.g., refs , , and − ), this scenario raised additional arguments. Specifically, there is a range of different claims about the electric field dependence of the emission, it being associated with the integer number of photons absorbed at the stage preceding the emission.…”

Section: Introductionmentioning

confidence: 99%

“…First, the experiments were performed for a wide range of structures and illumination conditions. Second, only very few studies resolved the dynamics of the PL spectrally (e.g., as in refs , , and ) or temporally (e.g., as in refs , , and − ) and even fewer resolved both; this prevented obtaining a deep understanding of the PL. Third, there was no comprehensive theoretical basis to explain the experimental data.…”

Section: Introductionmentioning

confidence: 99%

Crossover from Nonthermal to Thermal Photoluminescence from Metals Excited by Ultrashort Light Pulses

Sivan

Kalyan

et al. 2023

ACS Nano

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Photoluminescence from metal nanostructures following intense ultrashort illumination is a fundamental aspect of light–matter interactions. Surprisingly, many of its basic characteristics are under ongoing debate. Here, we resolve many of these debates by providing a comprehensive theoretical framework that describes this phenomenon and support it by an experimental confirmation. Specifically, we identify aspects of the emission that are characteristic to either nonthermal or thermal emission, in particular, differences in the spectral and electric field dependence of these two contributions to the emission. Overall, nonthermal emission is characteristic of the early stages of light emission, while the later stages show thermal characteristics. The former dominate only for moderately high illumination intensities for which the electron temperature reached after thermalization remains close to room temperature.

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“…The fit enables us to estimate the nuclear spin-lattice relaxation rate 1/T 1 at each temperature. Very recently, space-resolved photoemission measurements on EuFBiS 2 have revealed an inhomogeneous charge distribution with the coexistence of metallic and nonmetallic phases at mesoscopic length scales [10]. In our measurements, Eqs.…”

Section: Resultsmentioning

confidence: 66%

NMR Study of Layered Eu-based Bismuth-Sulfide EuFBiS₂

Deguchi

Kawasaki

Kishimoto

et al. 2020

Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2019)

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Using NMR measurements, we have investigated the electromagnetic state of EuFBiS 2 , which is metallic even without any elemental substitution and exhibits superconductivity. The nuclear spinlattice relaxation rate 1/T 1 of 19 F nuclei in the blocking layer distinctly becomes faster with increasing temperature from 200 K to room temperature, which indicates that a change in Eu valence (self doping) is responsible for the observed behavior. On the other hand, 1/T 1 of 209 Bi nuclei in the superconducting layer is proportional to temperature in the wide temperature range. This result microscopically evidences a metallic nature of the superconducting layer in EuFBiS 2. The self-electron doping level in this material is, however, much lower than those of other BiS 2-based materials with x ∼ 0.5, where x is a substitution quantity of O by F.

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Observation of femtosecond infrared luminescence in gold

Cited by 12 publications

References 30 publications

Photoluminescence Enhancement Exceeding 10-Fold from Graphene via an Additional Layer: Photoluminescence from Monolayer and Bilayer Graphene Epitaxially Grown on SiC

Photoluminescence Enhancement Exceeding 10-Fold from Graphene via an Additional Layer: Photoluminescence from Monolayer and Bilayer Graphene Epitaxially Grown on SiC

Crossover from Nonthermal to Thermal Photoluminescence from Metals Excited by Ultrashort Light Pulses

NMR Study of Layered Eu-based Bismuth-Sulfide EuFBiS₂

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Observation of femtosecond infrared luminescence in gold

Cited by 12 publications

References 30 publications

Photoluminescence Enhancement Exceeding 10-Fold from Graphene via an Additional Layer: Photoluminescence from Monolayer and Bilayer Graphene Epitaxially Grown on SiC

Photoluminescence Enhancement Exceeding 10-Fold from Graphene via an Additional Layer: Photoluminescence from Monolayer and Bilayer Graphene Epitaxially Grown on SiC

Crossover from Nonthermal to Thermal Photoluminescence from Metals Excited by Ultrashort Light Pulses

NMR Study of Layered Eu-based Bismuth-Sulfide EuFBiS2

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NMR Study of Layered Eu-based Bismuth-Sulfide EuFBiS₂