The verijied success of proton bombardment treatment in both the device isolation and the inductor Qimprovement [1][2] (see Fig. I ) on already-manufactured mixed-mode IC wafers briar to packaging) has also uncovered new phenomena, especially the explosive rises of inductance near certain frequency (or, frequencies) (see Figs. [3]. Based on such understanding, this paper aims at providing a new possibility ofgreatly enhancing the effectiveness of on-chip inductors by cushioning them on multiple dipoles using nanotechnical means.
2, 3) 131. A previous& proposed theory identified the cause to be resonant interaction between the inductor EM wave and the proton-caused defect electric dipoles