Observation of Esaki-Tsu negative differential velocity in GaAs/AlAs superlattices

Sibille, Alain; Palmier, J.F.; Wang, H.

doi:10.1103/physrevlett.64.52

Cited by 329 publications

(123 citation statements)

References 16 publications

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“…We calculated the current-voltage characteristic of the active superlattice mesa using the Esaki-Tsu I-V characteristic, 1 taking into account the electron distribution at 300 K 8 and both elastic and inelastic scattering. 9 The I-V characteristic is given by Iϭ2I p V/͕V c ͓1ϩ(V/V c ) 2 ͖, where acteristic ͑Fig. 1, dashed line͒ gives a good description of the main parameters (I p , V c ,and small-field conductance͒ of the experimental curve and also showed an NDC.…”

Section: ϫ3mentioning

confidence: 99%

Self-sustained current oscillation above 100 GHz in a GaAs/AlAs superlattice

Schomburg

Henini

Chamberlain

et al. 1999

Applied Physics Letters

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Section: ϫ3mentioning

confidence: 99%

Self-sustained current oscillation above 100 GHz in a GaAs/AlAs superlattice

Schomburg

Henini

Chamberlain

et al. 1999

Applied Physics Letters

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“…Many devices exhibit negative differential conductance (N DC) as multiple quantum wells, double barrier, double quantum dots, etc 1,2,3,4,5,6 . The N DC has applications as amplifiers and oscillators in the microwave, mmwave and Terahertz frequency range.…”

Section: Introductionmentioning

confidence: 99%

Negative differential conductance induced by electronic correlation in a double quantum dot molecule

2008

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Electron tunneling through a two stage Kondo system constituted by a double quantum-dot molecule side coupled to a quantum wire, under the effect of a finite external potential is studied. We found that I-V characteristic shows a negative differential conductance region induced by the electronic correlation. This phenomenon is a consequence of the properties of the two stage Kondo regime under the effect of an external applied potential that takes the system out of equilibrium. The problem is solved using the mean-field finite-U slave-boson formalism.

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“…19 Several recent papers show that the curious behavior of electrons in the superlattices may give rise to a rich variety of new nonlinear phenomena occurring in the THz-field irradiated superlattices. [20][21][22][23][24][25] In a number of papers Esaki-Tsu negative differential conductance was found to be experimentally realizable 26,27 and has been carefully examined [28][29][30] in the context of development of new millimeter-wave band ͑0.03-0.3 THz͒ oscillators. On the other hand, the recent observations of a strong dc current suppression indicating dynamical localization of electrons, 31 absolute negative conductance, 32,33 and Shapiro steps on the dc current-voltage curve of the THzfield irradiated superlattices 34 open the prospects for applications of the superlattices as novel solid state detectors operating in 1-10 THz-frequency band which the Bloch frequency in the superlattices normally belongs to.…”

Section: Introductionmentioning

confidence: 99%

Current responsivity of semiconductor superlattice THz-photon detectors

Игнатов

Jauho

1999

Journal of Applied Physics

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The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed for currently available superlattice diodes show that both the magnitudes and the roll-off frequencies of the responsivity are strongly influenced by an excitation of hybrid plasma-Bloch oscillations which are found to be eigenmodes of the system in the THz- frequency band. The expected room temperature values of the responsivity (2-3 A/W in the 1-3 THz-frequency band) range up to several percents of the quantum efficiency $e/\hbar\omega$ of an ideal superconductor tunnel junction detector. Properly designed semiconductor superlattice detectors may thus demonstrate better room temperature THz-photon responsivity than conventional Schottky junction devices.Comment: Revtex file, uses epsf, 11 pages. 11 eps-figures; EPS-files generated by scanner, original higher resolution line drawings available from antti@mic.dtu.dk by regular mail or fa

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Observation of Esaki-Tsu negative differential velocity in GaAs/AlAs superlattices

Cited by 329 publications

References 16 publications

Self-sustained current oscillation above 100 GHz in a GaAs/AlAs superlattice

Self-sustained current oscillation above 100 GHz in a GaAs/AlAs superlattice

Negative differential conductance induced by electronic correlation in a double quantum dot molecule

Current responsivity of semiconductor superlattice THz-photon detectors

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