Observation of enhanced carrier transport properties of Si ⟨100⟩-oriented whiskers under uniaxial strains

Zheng, Kun; Shao, Ruiwen; Deng, Qibo; Zhang, Yuefei; Li, Yujie; Han, Xiaodong; Zhang, Ze; Zou, Jin

doi:10.1063/1.4861425

Cited by 17 publications

(15 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A maximum gauge factor as large as 2820 is obtained at a bias voltage of 4 V for the NW (Figure c). This value is much larger than the gauge factors of ZnO NWs (≈1250), SiC NWs (≈7), 〈100〉 oriented Si whiskers (≈400) and p‐type 〈111〉 oriented Si NWs (≈130), and is comparable to the gauge factors of depleted Si NWs (≈3000), and Ge NWs (≈5000) . It should be noted that, due to the presence of the energy barriers for electron transport at NW‐probe contacts as verified by the non‐linear I–V curves in Figure and , our determined gauge factors are underestimated with the amount of underestimation decreasing with bias voltage increase (see Supporting Information).…”

mentioning

confidence: 60%

“…The high complexities of these effects increase the difficulty in unambiguously resolving the electromechanical properties of semiconductor NWs in theory, implying the importance to reveal them in experiments. Even though remarkable electromechanical responses to axial strain has hitherto been experimentally demonstrated for the NWs of many semiconductors including ZnO, Si, Ge, SiC, etc., none of them has been studied in experiments to establish the relationship between their electromechanical properties and NW crystal structures.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Remarkable and Crystal‐Structure‐Dependent Piezoelectric and Piezoresistive Effects of InAs Nanowires

Wei

et al. 2015

Advanced Materials

View full text Add to dashboard Cite

a promising material exhibiting the piezotronic effect in high frequency electronics and the piezo-phototronic effect in nearinfrared wavelength. However, to date, the piezoelectric effect of InAs NWs has never been demonstrated experimentally.Due to usually anisotropic piezoelectric and piezoresistive effects of semiconductors, the changes of the electrical properties of a semiconductor NW are expected to strongly depend on its crystal structures when mechanical stress is applied. To fi gure out the crystal structures exhibiting maximum electromechanical responses, it is important to establish the relationship between electromechanical properties of semiconductor NWs and NW crystal structures. As compared to bulk semiconductors, semiconductor NWs have been shown to exhibit additional features due to low dimensionality and high surface-to-volume ratio, e.g., quantum confi nement, [ 16 ] surface charge accumulation or depletion, [ 17 ] enhanced surface scattering of carriers, [ 18 ] etc. The high complexities of these effects increase the diffi culty in unambiguously resolving the electromechanical properties of semiconductor NWs in theory, implying the importance to reveal them in experiments. Even though remarkable electromechanical responses to axial strain has hitherto been experimentally demonstrated for the NWs of many semiconductors including ZnO, [ 2,[5][6][7]19 ] Si, [20][21][22][23][24][25][26][27] Ge, [ 28 ] SiC, [ 29 ] etc., none of them has been studied in experiments to establish the relationship between their electromechanical properties and NW crystal structures.In this paper, we in situ study the electromechanical properties of individual InAs NWs grown along different crystallographic directions under axial stretching inside a scanning electron microscope (SEM) and determine the crystal structures of the studied NWs by transmission electron microscopy (TEM). The capability of determining electromechanical properties of InAs NWs together with their crystal structures enables us to establish the relationship between them. Electrical conductance of single-crystalline 〈0001〉 oriented WZ NWs is observed to increase remarkably and asymmetrically for positive and negative bias voltages with tensile strain with an electromechanical gauge factor as large as 2820, which is attributed to the coexistence of remarkable piezoelectric and piezoresistive effects in the NWs. However, single-crystalline 〈 〉 1120 oriented WZ NWs and 〈011〉, 〈103〉, and 〈 〉 211 oriented zinc-blende (ZB) NWs are found to exhibit negligible piezoelectric and piezoresistive effects and the piezoelectric effect in single-crystalline 〈0001〉 oriented WZ NWs is signifi cantly suppressed by stacking faults, experimentally demonstrating the crystal-structure-dependent piezoelectric and piezoresistive effects of InAs NWs.Figure 1 a,b shows the SEM images of two InAs NW samples we study. NWs in Figure 1 a are vertically grown on a Si substrate with a diameter around ≈10 nm and exclusively exhibit single-crystalline WZ structure grown along 〈0001...

show abstract

mentioning

confidence: 60%

mentioning

confidence: 99%

Remarkable and Crystal‐Structure‐Dependent Piezoelectric and Piezoresistive Effects of InAs Nanowires

Wei

et al. 2015

Advanced Materials

View full text Add to dashboard Cite

show abstract

“…Transport measurements of as-grown nanowires were conducted in situ inside the F20 TEM at room temperature using a Nanofactory Instruments STM-TEM electrical probing system (EP ST1500). 24,25 The GaAsP nanowires were rst transferred to a homemade half Cu grid by gently touching the grid against the sample. 26 The Cu grid with the nanowires adhered to it was then mounted on the STM-TEM electrical probing system, and a sharp Au wire was xed on the opposite movable side of the Cu grid.…”

Section: Methodsmentioning

confidence: 99%

Spontaneous formation of core–shell GaAsP nanowires and their enhanced electrical conductivity

et al. 2015

Self Cite

View full text Add to dashboard Cite

show abstract

“…Usually, a fresh tungsten tip is fixed on the movable end of a piezo-motor and this tip can achieve movement precisely in three dimensions via adjusting the controlling system. More details can be found in our previous publications [29][30][31][32][33].…”

Section: Manipulation Of Nano-materials In Temmentioning

confidence: 99%

Fabrication of individual carbon nanotubes and their arrays in a transmission electron microscope

Zheng

Shao

Wang

et al. 2016

Carbon

Self Cite

View full text Add to dashboard Cite

In this study, we present an approach to manufacture individual and array-type carbon nanotubes in a transmission electron microscope. Semiconductor nanowires are used as templates to form a core-shell structure by depositing uniform amorphous carbon layers around the nanowires using electron-beam induced deposition. Joule heating produced by an applied external voltage melts the nanowires and crystallizes the amorphous carbon layer into nanotubes within a commercial in-situ scanning tunnelling microscope-transmission electron microscope probing system. Using this approach, carbon nanotubes with well controlled wall thicknesses, diameters and lengths have been fabricated. In-situ measurements of electrical properties reveal that the resultant carbon nanotubes have a semiconducting resistivity. By the demonstration of producing a nanotube array, this proof-of-concept approach opens a new pathway to fabricate highperformance carbon nanotube arrays with controllable morphology for practical applications.

show abstract

Observation of enhanced carrier transport properties of Si ⟨100⟩-oriented whiskers under uniaxial strains

Cited by 17 publications

References 40 publications

Remarkable and Crystal‐Structure‐Dependent Piezoelectric and Piezoresistive Effects of InAs Nanowires

Remarkable and Crystal‐Structure‐Dependent Piezoelectric and Piezoresistive Effects of InAs Nanowires

Spontaneous formation of core–shell GaAsP nanowires and their enhanced electrical conductivity

Fabrication of individual carbon nanotubes and their arrays in a transmission electron microscope

Contact Info

Product

Resources

About