Observation of Distinct Bulk and Surface Chemical Environments in a Topological Insulator under Magnetic Doping

Vobornik, I.; Panaccione, G.; Fujii, Jun; Zhu, Zhi Huai; Offi, Francesco; Salles, B. Rache; Borgatti, F.; Torelli, Piero; Rueff, Jean‐Pascal; Céolin, Denis; Artioli, Alberto; Manju, U.; Levy, G.; Marangolo, M.; Eddrief, M.; Krizmancic, Damjan; Ji, Huiwen; Damascelli, A.; Laan, G. van der; Egdell, R.G.; Cava, R. J.

doi:10.1021/jp502729u

Cited by 36 publications

(46 citation statements)

References 40 publications

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“…Similar Bi 5d shoulder peaks were reported in the core-level spectra for Fe surface deposited Bi2Se3 [13] and Fe surface deposited Bi2Te3 [24]. In the former, the shoulder 13 peaks were attributed to Bi with a lower oxidation state than 3+ [13].…”

Section: 2supporting

confidence: 77%

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Distinct effects of Cr bulk doping and surface deposition on the chemical environment and electronic structure of the topological insulator Bi2Se3

Yilmaz

Hines

Sun

et al. 2017

Applied Surface Science

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In this report, it is shown that Cr doped into the bulk and Cr deposited on the surface of Bi2Se3 films produced by molecular beam epitaxy (MBE) have strikingly different effects on both the electronic structure and chemical environment. peaks indicative of two Cr sites. These striking differences suggests an interesting possibility that better control of doping at only near surface region may offer a path to quantum anomalous Hall states at higher temperatures than reported in the literature.

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Section: 2supporting

confidence: 77%

“…In the former, the shoulder 13 peaks were attributed to Bi with a lower oxidation state than 3+ [13]. In the latter, the shoulder peaks were attributed to either Bi metal formation or Bi sub-tellurides [24]. As discussed below, the formation of Bi metal here with the surface deposition of Cr on Bi2Se3 is one possibility.…”

Section: 2mentioning

confidence: 98%

Distinct effects of Cr bulk doping and surface deposition on the chemical environment and electronic structure of the topological insulator Bi2Se3

Yilmaz

Hines

Sun

et al. 2017

Applied Surface Science

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“…The coupling of the Mn impurities was explained by a superexchange mechanism via the Te ions. In contrast, Zhang et al [12] predicted a valence state of 2+ for Mn in Bi 2 Te 3 , in agreement with experimental findings [15][16][17]. This was supported by a recent work by Li et al [13] in which strong indications for a half-filled 3d 5 configuration (Mn 2+ ) with an atomic like high spin state (Hund's rules) were found.…”

Section: Introductionsupporting

confidence: 63%

Spin dynamics and magnetic interactions of Mn dopants in the topological insulatorBi2Te3

et al. 2016

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The magnetic and electronic properties of the magnetically doped topological insulator Bi2−xMnxTe3 were studied using electron spin resonance (ESR) and measurements of static magnetization and electrical transport. The investigated high-quality single crystals of Bi2−xMnxTe3 show a ferromagnetic phase transition for x ≥ 0.04 at TC ≈ 12 K. The Hall measurements reveal a p-type finite charge-carrier density. Measurements of the temperature dependence of the ESR signal of Mn dopants for different orientations of the external magnetic field give evidence that the localized Mn moments interact with the mobile charge carriers leading to Ruderman-Kittel-KasuyaYoshida-type ferromagnetic coupling between the Mn spins of order 2 − 3 meV. Furthermore, ESR reveals a low-dimensional character of magnetic correlations that persist far above the ferromagnetic ordering temperature.

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“…For Bi 2 Te 3 [21], not only are low-binding energy features seen in the Bi 5d lines upon room temperature deposition of Fe, but new and intense Te 4d signals at ∼0.5 eV higher binding energy are also observed, attributed to the likely formation of iron telluride (FeTe 2 ) at the surface [21].…”

Section: Deposition and Measurement At 38 K (Core Levels)mentioning

confidence: 99%

“…This is of course important because in a device one has to make a connection between the TI and other electronics. Although such phenomena have been studied for a range of different adsorbate materials on Bi 2 Se 3 and Bi 2 Te 3 [15][16][17][18][19][20][21], relevant data are missing on bulk insulating three-dimensional (3D)-TI compounds, such as BSTS. Here results from angle-resolved photoelectron spectroscopy (ARPES) and core-level spectroscopy are combined to allow a better understanding of the interface and of the evaporated adsorbate-induced effects on the topological band structure.…”

Section: Introductionmentioning

confidence: 99%

Angle-resolved and core-level photoemission study of interfacing the topological insulatorBi1.5Sb0.5Te1.7Se1.3with Ag,

et al. 2015

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Angle-resolved and core-level photoemission study of interfacing the topological insulator Bi1.5Sb0.5Te1.7Se1.3 with Ag, Nb, and Fe de Jong, N.; Frantzeskakis, E.; Zwartsenberg, B.; Huang, Y.; Wu, D.; Hlawenka, P.; SanchezBarriga, J.; Varykhalov, A.; van Heumen, E.; Golden, M.S. Published in:Physical Review B DOI:10.1103/PhysRevB.92.075127 Link to publicationCitation for published version (APA): de Jong, N., Frantzeskakis, E., Zwartsenberg, B., Huang, Y. K., Wu, D., Hlawenka, P., ... Golden, M. S. (2015). Angle-resolved and core-level photoemission study of interfacing the topological insulator Bi1.5Sb0.5Te1.7Se1.3 with Ag, Nb, and Fe. Physical Review B, 92(7), [075127]. https://doi.org/10.1103/PhysRevB.92.075127 General rightsIt is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s) and/or copyright holder(s), other than for strictly personal, individual use, unless the work is under an open content license (like Creative Commons). Disclaimer/Complaints regulationsIf you believe that digital publication of certain material infringes any of your rights or (privacy) interests, please let the Library know, stating your reasons. In case of a legitimate complaint, the Library will make the material inaccessible and/or remove it from the website. Please Ask the Library: http://uba.uva.nl/en/contact, or a letter to: Library of the University of Amsterdam, Secretariat, Singel 425, 1012 WP Amsterdam, The Netherlands. You will be contacted as soon as possible. Interfaces between a bulk-insulating topological insulator (TI) and metallic adatoms have been studied using high-resolution, angle-resolved, and core-level photoemission. Fe, Nb, and Ag were evaporated onto Bi 1.5 Sb 0.5 Te 1.7 Se 1.3 (BSTS) surfaces both at room temperature and 38 K. The coverage and temperature dependence of the adsorption and interfacial formation process have been investigated, highlighting the effects of the overlayer growth on the occupied electronic structure of the TI. For all coverages at room temperature and for those equivalent to less than 0.2 monolayer at low temperature all three metals lead to a downward shift of the TI bands with respect to the Fermi level. At room temperature Ag appears to intercalate efficiently into the van der Waals gap of BSTS, accompanied by low-level substitution for the Te/Se atoms of the termination layer of the crystal. This Te/Se substitution with silver increases significantly for low temperature adsorption, and can even dominate the electrostatic environment of the Bi/Sb atoms in the BSTS near-surface region. On the other hand, Fe and Nb evaporants remain close to the termination layer of the crystal. On room temperature deposition, they initially substitute isoelectronically for Bi as a function of coverage, before substituting for Te/Se atoms. For low temperature deposition, Fe and Nb are too immobile for substitution processes and show a behavior consistent with clustering on the surface. For both Ag and Fe/Nb, these differing adsorption pat...

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Observation of Distinct Bulk and Surface Chemical Environments in a Topological Insulator under Magnetic Doping

Abstract: measure E = 300 ±10 meV in the pristine sample. We observe that the gap is reduced as the Mn content x increases, becoming E = 260 ±10 meV for x=0.04 and E = 230 ±20 for x= 0.09. The

Cited by 36 publications

References 40 publications

Distinct effects of Cr bulk doping and surface deposition on the chemical environment and electronic structure of the topological insulator Bi2Se3

Distinct effects of Cr bulk doping and surface deposition on the chemical environment and electronic structure of the topological insulator Bi2Se3

Spin dynamics and magnetic interactions of Mn dopants in the topological insulatorBi2Te3

Angle-resolved and core-level photoemission study of interfacing the topological insulatorBi1.5Sb0.5Te1.7Se1.3with Ag,

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