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Dai, Ning; Huang, Danhong; Liu, X-Q; Ym, Mu; Lü, Wei; Sc, Shen

doi:10.1103/physrevb.57.6566

Cited by 13 publications

(3 citation statements)

References 26 publications

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“…Using photomodulated transmission spectroscopy, Dai et al [5] have investigated the transitions in GaAs/Al x Ga 1−x As multiple QWs as a function of hydrostatic pressure up to 50 kbar. They observe a number of spectral structures associated with both direct and indirect transitions.…”

Section: Introductionmentioning

confidence: 99%

Simultaneous effects of hydrostatic stress and an electric field on donors in a GaAs-(Ga, Al)As quantum well

Morales¹,

Montes²,

López³

et al. 2002

J. Phys.: Condens. Matter

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Theoretical calculations on the influence of both an external electric field and hydrostatic stress on the binding energy and impurity polarizability of shallowdonor impurities in an isolated GaAs-(Ga, Al)As quantum well are presented. A variational procedure within the effective-mass approximation is considered. The pressure-related-X crossover is taken into account. As a general feature, we observe that the binding energy increases as the length of the well decreases. For the low-pressure regime we observe a linearly binding energy behaviour. For the high-pressure regime the simultaneous effects of the barrier height and the applied electric field bend the binding energy curves towards smaller values. For low hydrostatic pressures the impurity polarization remains constant in all cases with an increasing value as the field increases. This constant behaviour shows that the small variations in well width, effective mass, and dielectric constant with pressure do not appreciably affect polarizability. For high hydrostatic pressure, we see a non-linear increase in polarizability, mainly due to the decrease of barrier height as a result of the external pressure, which allows further deformation of the impurity.

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Section: Introductionmentioning

confidence: 99%

Simultaneous effects of hydrostatic stress and an electric field on donors in a GaAs-(Ga, Al)As quantum well

Morales¹,

Montes²,

López³

et al. 2002

J. Phys.: Condens. Matter

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“…These new crystal-growth techniques open up opportunities to study the optoelectronic properties and band structure of semiconductor superlattices and heterostructures under hydrostatic pressure, including coupling effects, resonant tunneling effects, and polarizability phenomena. It is now known that these effects can be enhanced under hydrostatic pressure, a fact which may lead to many potential applications in optoelectronic devices [1][2][3][4][5][6], such as strained semiconductor quantumwell lasers, transducers, infrared detectors, resonant tunneling diodes, and ballistic transistors.…”

Section: Introductionmentioning

confidence: 99%

Stress effects on the binding energy of shallow-donor impurities in symmetrical GaAs/AlGaAs double quantum-well wires

Bai

Liu

2007

J. Phys.: Condens. Matter

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The effects of applied compressive stress on the binding energies of shallow-donor impurity states with a finite confinement potential in symmetrical GaAs/AlGaAs double quantum-well wires (DQWWs) are studied theoretically using a variational procedure within the effective-mass approximation. Significant results for different wire and barrier widths, shallow-donor impurity positions, and compressive stress along the growth direction of the structure are obtained taking into account the Γ–X crossover and the image charge effects in the calculations. Our results show that the binding energy does not change appreciably with the size of the wire and barrier, or with the donor ion position. We also find that for stress values up to 13.5 kbar, the binding energy increases linearly with stress, while for stress values greater than 13.5 kbar, the binding energies show nonlinear behavior. Moreover, in the limit of double quantum wells (DQWs), our binding energy agrees with previously reported results. It is pointed out that compressive stress is an important factor in studies of the binding energies of shallow-donor impurity states in symmetrical GaAs/AlGaAs DQWWs.

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“…Due to the impressive development and improvement of semiconductor growth techniques such as molecular beam epitaxy (MBE), there has been a lot of experimental and theoretical work to study electron, exciton and impurity related phenomena in low semiconductor heterostructures such as the absorption and photoluminescence spectra under the action of applied electric, magnetic and uniaxial stress [1][2][3][4][5][6][7][8][9][10][11][12]. Miller et al [13] have investigated the photoluminescence spectra from GaAs-Al x Ga 1−x As quantum wells (QW) with nonuniform distribution of Be acceptors along the growth direction of the structure.…”

Section: Introductionmentioning

confidence: 99%

Binding energy and density of shallow impurity states in GaAs–(Ga, Al)As quantum wells: effects of an applied hydrostatic stress

López

Porras‐Montenegro

Duque

2003

Semicond. Sci. Technol.

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The effects of hydrostatic stress on the binding energy and the density of shallow-donor and shallow-acceptor impurity states in a GaAs-(Ga, Al)As quantum well are calculated using a variational procedure within the effective-mass approximation. Results are for different well widths and hydrostatic stresses, as a function of the impurity position along the growth direction of the structure. We have found that in the low-pressure regime the binding energy changes linearly for both donor and acceptor impurities, independently of the sizes of the well. However, for high pressures (greater than 13.5 kbar) this is valid for acceptors but not for donors due to the-X crossover. We have shown that there are two special structures in the density of impurity states, one associated with on-centre and the other with on-edge impurities. Also, we have observed that the density of impurity states depends strongly on the applied hydrostatic stress.

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Observation of direct and phonon-assisted indirect transitions inGaAs/Gax

Cited by 13 publications

References 26 publications

Simultaneous effects of hydrostatic stress and an electric field on donors in a GaAs-(Ga, Al)As quantum well

Simultaneous effects of hydrostatic stress and an electric field on donors in a GaAs-(Ga, Al)As quantum well

Stress effects on the binding energy of shallow-donor impurities in symmetrical GaAs/AlGaAs double quantum-well wires

Binding energy and density of shallow impurity states in GaAs–(Ga, Al)As quantum wells: effects of an applied hydrostatic stress

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