Observation of defects in a C₃N₄/diamond/Si structure by infrared light scattering tomography

Abstract

A structure of C3N4 and diamond multilayers on Si(100) substrate was prepared by plasma enhanced chemical vapour deposition and magnetron sputtering techniques. Morphology observation and chemical composition analysis of the structure were performed by scanning electron microscopy and energy dispersive x-ray analysis. The multilayers of C3N4 and diamond on Si substrate were clearly observed and the composition ratio of nitrogen to carbon was close to 1.33. Defects in this structure were, for the first time, investigated by infrared light scattering tomography. Most defects in C3N4 and diamond multilayers were introduced by an extended growth of the original defects in Si substrate determined through layer-by-layer tomography. The defect type is analytically discussed.

Incorporation of nitrogen into polycrystalline diamond surfaces by RF plasma nitridation process at different temperatures: Bonding configuration and thermal stabilty studies by in situ XPS and HREELS

“…Nitrogen doping enhances the thermionic electron emission (TEE) and electron field emission (EFE) properties of diamond films . In the past, several groups have attempted to incorporate nitrogen into diamond in large quantities, with the aim of forming the long sought β‐C 3 N 4 phase . Strother et al reported amine terminated diamond surfaces for anchoring organic molecules by photochemical reactions, which generated an interest in chemical sensing applications of diamond terminated with nitrogen functional groups.…”