Observation of Coulomb staircase and negative differential resistance at room temperature by scanning tunneling microscopy

Radojkovic, P.; Schwartzkopff, M.; Enachescu, M.; Stefanov, E.; Hartmann, E.; Koch, F.

doi:10.1116/1.588521

Cited by 47 publications

(14 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One of the most intensively investigated STM-based nanofabrication techniques is the electric-field-induced material transfer of a tip to a substrate through the application of voltage pulses [16][17][18][19][20][21][22][23][24][25][26][27][28][29]. Because the pulse width applied is less than ∼1 ms, this method is fast.…”

Section: Nanostructure Fabrication By Tip-materials Transfer Using Volmentioning

confidence: 99%

“…They demonstrated that atomic emission from a gold tip to a gold substrate through the application of voltage pulses in air can be used to write gold nanodot patterns with no apparent degradation of the tip. During the early 1990s, many researchers reported the field-induced transfer of tip materials through the application of voltage pulses in various environments, such as in air [16][17][18][19], UHV [20,21], or liquid [22]. By these tip-material-transfer methods, various sizes of nanomounds can in principle be deposited at the desired position.…”

Section: Nanostructure Fabrication By Tip-materials Transfer Using Volmentioning

confidence: 99%

See 1 more Smart Citation

Active nanocharacterization of nanofunctional materials by scanning tunneling microscopy

Fujita

Sagisaka

2008

Science and Technology of Advanced Materials

View full text Add to dashboard Cite

Recent developments in the application of scanning tunneling microscopy (STM) to nanofabrication and nanocharacterization are reviewed. The main focus of this paper is to outline techniques for depositing and manipulating nanometer-scale structures using STM tips. Firstly, the transfer of STM tip material through the application of voltage pulses is introduced. The highly reproducible fabrication of metallic silver nanodots and nanowires is discussed. The mechanism is thought to be spontaneous point-contact formation caused by field-enhanced diffusion to the apex of the tip. Transfer through the application of z-direction pulses is also introduced. Sub-nanometer displacement pulses along the z-direction form point contacts that can be used for reproducible nanodot deposition. Next, the discovery of the STM structural manipulation of surface phases is discussed. It has been demonstrated that superstructures on Si(001) surfaces can be reverse-manipulated by controlling the injected carriers. Finally, the fabrication of an atomic-scale one-dimensional quantum confinement system by single-atom deposition using a controlled point contact is presented. Because of its combined nanofabrication and nanocharacterization capabilities, STM is a powerful tool for exploring the nanotechnology and nanoscience fields.

show abstract

Section: Nanostructure Fabrication By Tip-materials Transfer Using Volmentioning

confidence: 99%

Section: Nanostructure Fabrication By Tip-materials Transfer Using Volmentioning

confidence: 99%

Active nanocharacterization of nanofunctional materials by scanning tunneling microscopy

Fujita

Sagisaka

2008

Science and Technology of Advanced Materials

View full text Add to dashboard Cite

show abstract

“…[12,13] The electronic and optical properties of metallic nanoparticles have also been investigated. [14][15][16] Single electron charging and tunneling effects of nanosized metallic clusters grown on semiconducting surfaces have been reported, [17][18][19][20][21][22][23] allowing the possibilities to create single electron tunneling (SET) devices at room temperature by controlling the tunneling conditions through these metallic clusters. SET is characterized by the presence of the Coulomb blockade and Coulomb staircases in I-V curves.…”

Section: Introductionmentioning

confidence: 99%

Electronic Properties of Ag Reconstructions on Si(111): Coulomb Blockade Behavior at Room Temperature

Chandola

McGilp

Esser

2018

Physica Status Solidi (b)

View full text Add to dashboard Cite

The electronic properties and optical response of Si(111)–Ag reconstructions, with distinct interface structures, are studied with scanning tunneling microscopy (STM), reflectance anisotropy spectroscopy (RAS), and infrared spectroscopic ellipsometry (IRSE). The results are compared to previous studies on the Si(111)‐(3 × 1)–Ag surface. Depending on the preparation conditions, STM shows hybrid surfaces comprising (√3 × √3) areas with semiconducting (3 × 1)–Ag regions or metallic Ag islands. RAS of the (√3 × √3)–Ag reconstruction mostly shows a flat response, confirming the isotropic nature of the surface while Ag islands on this surface produce a steep increase in the infrared as well as a strong optical anisotropy at 3.5 eV. Scanning tunneling spectroscopy (STS) of the islands shows a high density of states with almost no structure. STS of Ag nanodots on the (3 × 1)–Ag surface shows distinct Coulomb resonances within the Si bandgap while the Si(111)‐(3 × 1)–Ag surface reveals an expected semiconducting behavior with a band gap and no sign of resonances. Ag islands on the (3 × 1)–Ag surface also show weak Coulombic oscillations indicating that local transport depends on the electronic properties of the interface.

show abstract

“…Then, perturbation theory gives the sequential tunneling rate by the orthodox tunneling theory, Fermi's golden rule [1]- [3]- [15]. And also, in the sequential tunneling regime, where total electrical capacitance of the island is small enough, c E can be significantly larger than thermal energy, T K B , that leads to Coulomb blockade at low bias voltages and to characteristic 'Coulomb staircase' of electric current above a certain threshold voltage [6]- [7]- [8]- [9]- [10]- [12]- [13]- [14]. In this condition, the current in F/F/F SETs can be controlled under the influence of gate charge by the tuning gate voltage.…”

Section: Introductionmentioning

confidence: 99%

Reduced Master Equation as a Novel and Fast Method for Modeling of Spin Transport in Ferromagnetic Single Electron Transistors

Asgari¹,

Faez²

2011

IJAPM

View full text Add to dashboard Cite

I. INTRODUCTIONA ferromagnetic single electron transistor (FMSET) is a novel device that offers further miniaturization of electrical device components which is a general need owing to the fact that high density memories and small and accurate sensors are essential to achieve more voluminous and faster chips [1]. A F/F/F FMSET includes a small central ferromagnetic electrode (island) coupled by tunnel barriers, to ferromagnetic source and drain leads as well as external nonmagnetic gate. The structure of such transistors is F/F/F as source/gate/drain [2]. When magnetic configuration of leads and island are parallel or anti parallel alignment, the junction resistance is low and high respectively as shown in Fig. 1. Fig. 2 is equivalent circuit of F/F/F SETs. There are three significant capacitors, first and second junctions (c 1 and c 2 ) and the gate capacitor (c g ), and also There are three different transport regimes: First sequential tunneling, which electrons tunnel consecutively one by one through barriers, second Co-tunneling that electrons flow following higher-order tunneling processes consisting tunneling of one, two or more electrons [1].The third tunneling regime is strong coupling that electrons propagate from the source to the drain and cannot localize on the island. These electrons will coherently move through the system, so perturbation theory fails [1]. If the resistances of tunnel junctions are much larger than the quantum resistance [14]. In this condition, the current in F/F/F SETs can be controlled under the influence of gate charge by the tuning gate voltage. When we keep the bias voltage for adding a charge in or removing a charge from the island, the charging energy c E is required. When the gate voltage is tuned, two adjacent charge states become degenerate, so the electrons can be added to or removed from the island without extra energy cost and sequential tunneling current is produced [20].Modeling of Ferromagnetic single-electron transistors is based on (I) Master Equation method, (II) the Monte Carlo method, and (III) Deterministic method. They are based high numerical intensive and need several hours to get result. However, the reduced master equation method as a novel and fast simulation method of spin dependent transport in ferromagnetic single electron transistors (F/F/F SETs) has not been mentioned in no paper, this method for modeling F/F/F SETs is more simplified and improves the speed of numerical simulation.The essential formulations for modeling following the full Generally, statistical mechanics and stochastic processes are required to specify the mechanism of many electrons tunneling at a junction. When an electron is added to the island, the system energy will be increased by c E . So, the system state is defined according to the number of electrons in the island. The steady state master equation tells us about current situation of the system by calculating occupation probability of each one of discrete set of states. In the Sequential tunneling regime, the electrons tu...

show abstract

Observation of Coulomb staircase and negative differential resistance at room temperature by scanning tunneling microscopy

Cited by 47 publications

References 0 publications

Active nanocharacterization of nanofunctional materials by scanning tunneling microscopy

Active nanocharacterization of nanofunctional materials by scanning tunneling microscopy

Electronic Properties of Ag Reconstructions on Si(111): Coulomb Blockade Behavior at Room Temperature

Reduced Master Equation as a Novel and Fast Method for Modeling of Spin Transport in Ferromagnetic Single Electron Transistors

Contact Info

Product

Resources

About