Observation of antiferromagnetic coupling in epitaxial ferrite films

Knittel, I.; Wei, Jiandong; Yinqing, Zhou; Arora, S. K.; Shvets, I. V.; Luysberg, M.; Hartmann, Uwe

doi:10.1103/physrevb.74.132406

Cited by 10 publications

(6 citation statements)

References 20 publications

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“…If two AF-APBs are present along the current path, the linear AF-APBs density for a 60 nm film would be one AF-APB per 80 nm, which seems unreasonably large. As it follows from the magnetic force microscopy, for a 100 nm thick film, the linear AF-APBs density is around 1 AF-APB per 200 nm . A similar linear density of AF-APBs is expected for 60 nm film .…”

supporting

confidence: 65%

“…For probing one AF-APB, the gap between the contacts is around 80 nm and the resistivity is around 0.029 Ω cm at room temperature, which is twice the value of a 60 nm thick film and is also 1 order of magnitude larger than the bulk value of 0.005 Ω cm. It was shown by Knittel et al that the AF-APBs can be directly imaged by conventional scanning probe microscopy. , In this work we focus on AF-APBs characterization via resistivity measurement. Roughly, the double resistivity implies the local density of AF-APBs in the current path has been doubled in comparison with macroscopic contact gap measurements.…”

mentioning

confidence: 99%

“…It was shown by Knittel et al that the AF-APBs can be directly imaged by conventional scanning probe microscopy. 20,21 In this work we focus on AF-APBscharacterizationviaresistivitymeasurement.Roughly, the double resistivity implies the local density of AF-APBs in the current path has been doubled in comparison with macroscopic contact gap measurements. If two AF-APBs are present along the current path, the linear AF-APBs density for a 60 nm film would be one AF-APB per 80 nm, which seems unreasonably large.…”

mentioning

confidence: 99%

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Probing One Antiferromagnetic Antiphase Boundary and Single Magnetite Domain Using Nanogap Contacts

Abid

Chun

et al. 2010

Nano Lett.

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We have probed one antiferromagnetic (AF) antiphase boundary (APB) and a single Fe(3)O(4) domain using nanogap contacts. Our experiments directly demonstrate that, in the case of probing one AF-APB, a large magnetoresistance (MR), high resistivity, and a high saturation field are observed as compared with the case of probing a single Fe(3)O(4) domain. The shape of the temperature-dependent MR curves is also found to differ between the single domain and one of the AF-APB measurements, with a characteristic strong temperature dependence for the single domain and temperature independence for the one AF-APB case. We argue that these observations are indicative of profound changes in the electronic transport across APBs. The investigated APB defects increase the activation energy and disturb the long-range charge ordering of monodomain Fe(3)O(4).

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confidence: 65%

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confidence: 99%

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confidence: 99%

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Probing One Antiferromagnetic Antiphase Boundary and Single Magnetite Domain Using Nanogap Contacts

Abid

Chun

et al. 2010

Nano Lett.

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“…Ref. [38]). In our SQUID magnetometry measurements their contribution is difficult to quantify, since it is masked by the diamagnetic contribution from the MgO substrate at large H ext .…”

Section: A Static Magnetic Propertiesmentioning

confidence: 99%

Reduced effective magnetization and damping by slowly-relaxing impurities in strained $γ$-$\mathrm{Fe_2O_3}$ thin films

Müller¹,

Scheufele²,

Gückelhorn³

et al. 2022

Preprint

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“…The antiferromagnetic coupling may occur due to Ru-O-Fe bond at interface and is enhanced by replacing Ga with Fe. [22][23][24] At present, it is not clear whether a magnetoelectric interaction involves with the materials. But, it is very intriguing to study the effects of the stacking orders between GFO and SRO layers on magnetic and electric properties of the heterostructures.…”

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confidence: 99%

Room-temperature polarization switching and antiferromagnetic coupling in epitaxial (Ga,Fe)2O3/SrRuO3 heterostructures

Lee

Shin

et al. 2015

Applied Physics Letters

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Room-temperature reversible remnant polarization of gallium ferrite thin-films is reported as a multiferroic material with non-zero order parameters of polarization and magnetization. With the addition of Fe ions in Ga sites, Ga 0.6 Fe 1.4 O 3 (GFO) thin films have been considered as potentially promising of multiferroicity. The b-axis oriented epitaxial GFO films were grown on SrRuO 3 (111)/ SrTiO 3 (111). The six-fold symmetric in-plane epitaxy of the GFO films was confirmed using X-ray diffraction. The magnetic moment of the films was measured as a function of temperature and external magnetic field, which shows a room-temperature non-zero magnetization. Macroscopic and microscopic methods have been applied to demonstrate the polarization switching of the films. The remnant polarization is measured as 0.05 lC/cm 2. Reduction of leaky behaviors of the GFO films owing to the conducting oxide of SrRuO 3 will pave a way to take advantage of the roomtemperature non-zero multi-orders for future non-volatile memory device applications.

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Observation of antiferromagnetic coupling in epitaxial ferrite films

Cited by 10 publications

References 20 publications

Probing One Antiferromagnetic Antiphase Boundary and Single Magnetite Domain Using Nanogap Contacts

Probing One Antiferromagnetic Antiphase Boundary and Single Magnetite Domain Using Nanogap Contacts

Reduced effective magnetization and damping by slowly-relaxing impurities in strained $γ$-$\mathrm{Fe_2O_3}$ thin films

Room-temperature polarization switching and antiferromagnetic coupling in epitaxial (Ga,Fe)2O3/SrRuO3 heterostructures

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