Observation and modeling of random telegraph signals in the gate and drain currents of tunneling metal–oxide–semiconductor field-effect transistors

Abstract

Parallel measurements of random telegraph signals (RTS) in the gate and drain currents of n-metal–oxide–semiconductor field-effect transistors with 1.3-nm-thin gate oxides are presented. RTS appear simultaneously in both currents. Contrary to what could be expected, the signals have opposite signs in the gate and drain currents. A model is proposed to explain this phenomenon by the Schottky effect. The relative amplitude of the signal fluctuation in the gate current is significantly higher than that in the drain current. Therefore, the gate current is a much more sensitive indicator for RTS than the drain current.

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

“…Trapping of a single carrier charge in defect states near the Si/SiO interface, and the related local modulation in carrier density and/or mobility [68]- [70] in an area comparable with the characteristic device dimensions, will have a profound effect on the drain and gate current [71] in decananometer MOSFETs. Corresponding random telegraph signals (RTS) with amplitudes larger than 60% have already been reported at room temperature in decananometer channel width devices [72].…”

RTS amplitudes in decananometer MOSFETs: 3-D simulation study

“…Prototype 30-nm MOSFETs have already been developed [2], [3] for the 65-nm technology node expected in 2005 [4]. Trapping of a single carrier charge in defect states near the Si/SiO interface and the related local modulation in carrier density and/or mobility [5]- [7] in an area comparable with the characteristic device dimensions, will have a profound effect on the drain and gate current [8] in such MOSFETs. Corresponding random telegraph signals (RTS) with amplitudes larger than 60% have already been reported at room temperature in decananometer channel width devices [9].…”

Role of Hydration on the Electronic Transport through Molecular Junctions on Silicon

“…Taking tM=19 ± 1 Å (see Table 1 dipoles of water molecules is also consistent with the large GH2O conductance compared to GSAM, the large capacitance CH2O (see Table 2) and the asymmetry in I-V curves for hydrated samples, because this resonant energy level can induce a trap-assisted tunneling and tunnel barrier lowering which may be at the origin of such effects as already observed. [47][48][49] For sample A, VRES is shifted to higher bias (VRES≈1.35 V ±0.25: see Fig. S6).…”

“…34 In any case, for FET transistors, α <1, except some exceptions for long 1D devices such as nanowires 51 or carbon nanotubes. 52 In the case of a MOS tunnel capacitor (a device similar to our molecular junctions with an ultra-thin silicon oxide instead an organic monolayer as the tunnel barrier), 53 the shift of voltage across the junction can be magnified (α up to 1000) due to image-charge induced tunnel barrier lowering 49,53 or trap-assisted tunneling. 54 Following Ref.…”