ac electrical measurements are conducted in high vacuum, perpendicular to the plane of C 60 ͑111͒ films, sandwiching these films between parallel and conducting surfaces. The C 60 ͑111͒ films are grown epitaxially on Ag͑111͒ substrates. A flat and smooth gold electrode surface is pressed onto the surfaces of these films. Frequency and temperature are varied from /2ϭ40-100 kHz, and Tϳ85-530 K, respectively. Decreasing T below room temperature, the dielectric permittivity, Ј, increases due to the establishment of orientational order among C 60 molecules. Oxygen desorption studies suggest that Ј may depend on oxygen concentration, as well as the structural environments in which oxygen and C 60 molecules interact with each other. Measurements conducted above room temperature, show that Ј͑,T͒ can be rescaled into a single master function, revealing that ac electrical conductivities of the films are thermally activated across the band gap of the crystalline C 60 semiconductor. ͓S0163-1829͑96͒00347-5͔