Abstract:Abstract-In this work, for the first time, the electrical characteristic of the enhancement-mode (E-mode) N-polar GaN metal-insulator-semiconductor field effect transistor with self-aligned source/drain regions is investigated by SILVACO TCAD software. Macroscopic polarization effect of III-V nitrides are included and are used to realize the Emode operation. Numerical study results show that E-mode N-polar GaN transistor can keep E-mode operation at the gate length of 0.62 μm, and the simulation result is in a… Show more
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