Numerical solution of coupled steady-state hot-phonon–hot-electron Boltzmann equations in InP

Vaissière, J. C.; Nougier, J. P.; Fadel, M.; Hlou, Laamari; Kočevar, P.

doi:10.1103/physrevb.46.13082

Cited by 28 publications

(20 citation statements)

References 25 publications

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“…The detailed expressions for the above operators and rate can be found in Ref. 20. We remark that ͑i͒ Ĉ po depends on the PDF and, as a consequence, Eq.…”

Section: Theorymentioning

confidence: 97%

“…The influence of hot phonons on carrier transport parameters in polar semiconductors has been theoretically studied in relation with nonohmic transport in bulk material and quantum wells, 19,20 laser photoexcitation, 18,22 and noise phenomena. [23][24][25] In what concerns the transient transport regime, the influence associated with the presence of highly nonequilibrium optical phonons has been investigated for the first time in Ref.…”

Section: Introductionmentioning

confidence: 99%

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Nonequilibrium phonon effects on the transient high-field transport regime in InP

et al. 1996

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We present a detailed investigation of the transient transport regime in InP at room temperature based on an original method to solve numerically the coupled hot-phonon-hot-carrier time-dependent Boltzmann equations for the case of a steplike high dc electric field pulse. The method enables a study of the perturbation of the phonon distribution function induced by hot carriers and the corresponding modifications of the carrier distribution function. The numerical accuracy of the method is far beyond other existing methods, and, as a consequence, the time behavior of the main transport parameters can be resolved in great detail. The presence of nonequilibrium phonons is found to be responsible for an overall increase in the time duration of the transient regime. Modifications in the time evolution of the main transport parameters are also observed; in particular, the carrier drift velocity exhibits a second overshoot for electric fields near the threshold value for negative differential mobility. The sensitivity of the results to the value of the phonon relaxation time is also discussed.

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“…The detailed expressions for the above operators and rate can be found in Ref. 20. We remark that ͑i͒ Ĉ po depends on the PDF and, as a consequence, Eq.…”

Section: Theorymentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Nonequilibrium phonon effects on the transient high-field transport regime in InP

et al. 1996

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“…D. Snoke [9] has properly noticed that the name BEC can be misleading (some authors call it "resonance", e.g. in the case of phonons [10]), and following this author it is better not to be haggling about names, and we introduce the nomenclature NEFBEC (short for Non-Equilibrium Fröhlich-Bose-Einstein Condensation for the reasons stated below). As noticed, here we consider the case of magnons (boson-like quasi-particles), demonstrating that NEFBEC of magnons is another example of a phenomenon common to many-boson systems embedded in a thermal bath (in the conditions that the interaction of both generates non-linear processes) when driven sufficiently away from equilibrium by the action of an external pumping source and which display possible applications in the technologies of devices and medicine.…”

Section: Introductionmentioning

confidence: 99%

Dynamics of a Bose-Einstein condensate of excited magnons

2013

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Abstract. The emergence of a non-equilibrium Bose-Einstein-like condensation of magnons in rf-pumped magnetic thin films has recently been experimentally observed. We present here a complete theoretical description of the non-equilibrium processes involved. It it demonstrated that the phenomenon is another example of the presence of a Bose-Einstein-like condensation in nonequilibrium many-boson systems embedded in a thermal bath, better referred-to as Fröhlich-Bose-Einstein condensation. The complex behavior emerges after a threshold of the exciting intensity is attained. It is inhibited at higher intensities when the magnon-magnon interaction drives the magnons to internal thermalization. The observed behavior of the relaxation to equilibrium after the end of the pumping pulse is also accounted for and the different processes fully described.

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“…The complexity and magnitude of such a task, however, has prevented truly rigorous solutions of the coupled transport physics at such length and time scales. Various approximations in either the electron or phonon models are typically necessary [3,10,11]. In this work, we take a novel approach to coupling the two carrier populations by combining an electron Monte Carlo (EMC) technique, with a simplified "split-flux" form of the phonon BTE (SF-BTE) and solving them in iteration in a realistic device geometry.…”

Section: Coupling Electrons and Phononsmentioning

confidence: 99%

Thermal simulation techniques for nanoscale transistors

Rowlette¹,

Pop²,

Sinha³

et al.

ICCAD-2005. IEEE/ACM International Conference on Computer-Aided Design, 2005.

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Thermal simulations are important for advanced electronic systems at multiple length scales. A major challenge involves electrothermal phenomena within nanoscale transistors, which exhibit nearly ballistic transport both for electrons and phonons. The thermal device behavior can influence both the mobility and the leakage currents. We discuss recent advances in modeling coupled electronphonon transport in future nanoscale transistors. The solution techniques involve solving the Boltzmann Transport Equation (BTE) for both electrons and phonons. We present a practical method for coupling an electron Monte Carlo simulation with an analytic "splitflux" form of the phonon BTE. We use this approach to model selfheating in a 20 nm quasi-ballistic n+/n/n+ silicon diode, and to investigate the role of hot electron and hot phonon transport.

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Numerical solution of coupled steady-state hot-phonon–hot-electron Boltzmann equations in InP

Cited by 28 publications

References 25 publications

Nonequilibrium phonon effects on the transient high-field transport regime in InP

Nonequilibrium phonon effects on the transient high-field transport regime in InP

Dynamics of a Bose-Einstein condensate of excited magnons

Thermal simulation techniques for nanoscale transistors

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