Numerical simulations of N-type CdSe poly-TFT electrical characteristics with trap density models of Atlas/Silvaco

Realization of Visible‐Light Detection in InGaZnO Thin‐Film Transistor via Oxygen Vacancy Modulation through N2 Treatments

“…In this work, the DOS of IGZO is assumed to consist of band‐tailed states characterized by shallow energy levels and deep energy levels away from the forbidden band edge, respectively. The distribution functions of the DOS for the acceptor‐like state defects ( g A ) and donor‐like state defects ( g D ) can be expressed respectively as the following formulas [ 39 ] $$$$\begin{equation}{g}_{\mathrm{A}}\left( E \right) = {N}_{{\mathrm{TA}}} \times \exp \left[ {\frac{{E - {E}_{\mathrm{c}}}}{{{W}_{{\mathrm{TA}}}}}} \right] + {N}_{{\mathrm{GA}}} \times \exp \left[ { - \left( {\frac{{{E}_{{\mathrm{GA}}} - E}}{{{W}_{{\mathrm{GA}}}}}} \right)^{2}} \right]\end{equation}$$$$and $$$$\begin{equation}{g}_{\mathrm{D}}\left( E \right) = {N}_{{\mathrm{TD}}} \times \exp \left[ {\frac{{E - {E}_{\mathrm{c}}}}{{{W}_{{\mathrm{TD}}}}}} \right] + {N}_{{\mathrm{GD}}} \times \exp \left[ { - \left( {\frac{{E - {E}_{{\mathrm{GD}}}}}{{{W}_{{\mathrm{GD}}}}}} \right)^{2}} \right],\end{equation}$$$$which can be summarized as exponentially decaying band‐tailed states and deep energy levels characterized by Gaussian distributions. N TA and N TD are, respectively, the DOS at the conduction band edge and valence band edge, while W TA and W TD determine the change of band‐tailed state in the forbidden band.…”

“…In this work, the DOS of IGZO is assumed to consist of band-tailed states characterized by shallow energy levels and deep energy levels away from the forbidden band edge, respectively. The distribution functions of the DOS for the acceptor-like state defects (g A ) and donor-like state defects (g D ) can be expressed respectively as the following formulas [39] g…”

Reducing Off-State and Leakage Currents by Dielectric Permittivity-Graded Stacked Gate Oxides on Trigate FinFETs: A TCAD Study

“…The logarithmic term includes the carrier statistics and and are the quasi-Fermi levels on either side of the barrier. The range of integration is determined according to the band edge shape at any given contact bias [ 17 ].…”

“…This paper analyzed how TFT mobility, V TH , SS, I ON, and I OFF was affected due to different gas flow concentrations in the PECVD process to develop the SiN x layer. Regarding gate dielectrics consisting of two- or three-stage known dielectrics working on FinFETs, fabrications on top of Si-channel FinFETs were presented in papers by Dosev [ 16 ] in 2003 and by Jankovic [ 17 ] in 2012. Kauerauf [ 18 ] in 2005 tried to minimize the gate leakage current by using SiO 2 and various high-κ dielectrics like ZrO 2 and HfO 2 together in the same stack.…”

Plasma Nitridation Effect on β-Ga2O3 Semiconductors

“…The electrical and optoelectronic performance of semiconductor devices are mainly affected by the presence of defects or crystal imperfections in the semiconductor. With a metal oxide semiconductor including β -Ga 2 O 3 , oxygen vacancies are one of the most common defects and are known to serve as electron trap sites whose energy levels are below the conduction band (CB) edge [ 12 ]. Through the electron trap sites below the CB, electrons are easily trapped and de-trapped during device operation, which significantly degrades device performance for both electronics and optoelectronics.…”