Abstract:Absaact-The effects of temperature, Al mole fraction, and doping on the I-V characteristics of abrupt GaAdAIGaAs hetgrojunctiom are studied by numerically solving the basic semiconductor equations. Numerical models based on drift-diffusion with and without inclusion of thermionic emission current at the heterointerface are used and their results are compared. The simulation shows that neglecting the thermionic emission Mi overestimate the current, especially, at lower temperatures, at higher mole fraction, or … Show more
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